SCHEMBL278720

SCHEMBL278720

[2H]Oc1ccc(C2(c3ccc(O[2H])c(C4CCCCC4)c3)CCCCC2)cc1C1CCCCC1

nearest known ligand 0.47

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 4/20 0.47
ESR2 Q92731 4/20 0.47
HSP90AA1 P07900 1/20 0.42
NUDT1 P36639 1/20 0.39
BACE1 P56817 1/20 0.39
ALDH1A1 P00352 2/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
LMNA P02545 3/20 0.33
ALOX12 P18054 3/20 0.33
ACHE P22303 1/20 0.33
ACMSD Q8TDX5 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
MAPT P10636 1/20 0.31
HTT P42858 1/20 0.31
THRB P10828 1/20 0.30
PPARA Q07869 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10595392 0.89 ESR1 (0.56) ESR1ESR2HSP90AA1NUDT1BACE1
SCHEMBL29401448 0.89 ESR1 (0.56) ESR1ESR2HSP90AA1NUDT1BACE1
SCHEMBL3021025 0.89 ESR1 (0.56) ESR1ESR2HSP90AA1NUDT1BACE1
SCHEMBL20225257 0.89 ESR1 (0.56) ESR1ESR2HSP90AA1NUDT1BACE1
SCHEMBL278620 0.89 ESR1 (0.56) ESR1ESR2HSP90AA1NUDT1BACE1
SCHEMBL9008331 0.89 ESR1 (0.56) ESR1ESR2HSP90AA1NUDT1BACE1
SCHEMBL5881414 0.89 ESR1 (0.56) ESR1ESR2HSP90AA1NUDT1BACE1
SCHEMBL10941119 0.84 ESR2 (0.59) ESR1ESR2HSP90AA1NUDT1BACE1
SCHEMBL28105861 0.77 HSP90AA1 (0.45) ESR1ESR2HSP90AA1NUDT1BACE1
SCHEMBL30578994 0.76 HSP90AA1 (0.44) ESR1ESR2HSP90AA1NUDT1BACE1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8173349-B2 Photosensitive resin composition, polymer compound, method of forming a pattern, and electronic device FUJIFILM CORPORATION (JP) 2012-05-08 US disclosed
US-8133550-B2 Good breaking elongation characteristics, achievable high sensitivity and high film remaining rate, little in pattern size fluctuation at the heating time after lithographic process, capable of stable pattern formation; manufacturing a semiconductor device FUJIFILM CORPORATION (JP) 2012-03-13 US disclosed
US-20100080963-A1 PHOTOSENSITIVE RESIN COMPOSITION, POLYMER COMPOUND, METHOD OF FORMING A PATTERN, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2010-04-01 US disclosed
US-7598009-B2 Photosensitive resin composition, production method for cured relief pattern using it, and semiconductor device FUJIFILM CORPORATION (JP) 2009-10-06 US disclosed
US-20090035693-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR CURED RELIEF PATTERN USING IT, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed