SCHEMBL2808700

SCHEMBL2808700

CCCCCOC(C)(C)[O]

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 9/20 0.39
CA2 P00918 9/20 0.39
CA9 Q16790 8/20 0.39
LPAR3 Q9UBY5 3/20 0.38
CA12 O43570 3/20 0.38
CA7 P43166 3/20 0.38
CA14 Q9ULX7 3/20 0.38
LPAR1 Q92633 2/20 0.38
LPAR2 Q9HBW0 2/20 0.38
CA3 P07451 2/20 0.38
CA4 P22748 2/20 0.38
CA6 P23280 2/20 0.38
CA5A P35218 2/20 0.38
CA5B Q9Y2D0 2/20 0.38
NAAA Q02083 1/20 0.38
CES2 O00748 2/20 0.38
RECQL P46063 2/20 0.37
TSHR P16473 2/20 0.37
GLA P06280 1/20 0.37
HPGD P15428 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1357038 0.92
SCHEMBL1262866 0.80
SCHEMBL29018648 0.79 CA1 (0.43) CA1CA2CA9LPAR3CA12
SCHEMBL252597 0.78 THRB (0.39) CA1CA2CA9LPAR3CA12
SCHEMBL9498994 0.78 CA1 (0.42) CA1CA2CA9LPAR3CA12
SCHEMBL24829882 0.77 TSHR (0.39) CA1CA2CA9LPAR3CA12
SCHEMBL9349496 0.77 GGPS1 (0.47) CA1CA2CA9LPAR3LPAR1
SCHEMBL4505591 0.76 THRB (0.44) CA1CA2CA9LPAR3CA12
SCHEMBL7927231 0.76 CA1 (0.44) CA1CA2CA9LPAR3CA12
SCHEMBL24829886 0.76 THRB (0.44) CA1CA2CA9LPAR3CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8895222-B2 Actinic ray-sensitive or radiation-sensitive resin composition and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-11-25 US disclosed
US-20100248149-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6861209-B2 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-03-01 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-20040106070-A1 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-06-03 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5880169-A HAVING HIGH RESOLUTION FOR FINE PATTERNING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-09 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed
US-5824824-A AROMATIC SULFONATE ANIONS AND DISSOLUTION CONTRAST IN EXPOSED AND NONEXPOSED AREAS, POSITIVE RESISTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-10-20 US disclosed