SCHEMBL28203641

SCHEMBL28203641

CCCCCC[SiH2]NCC

nearest known ligand 0.42

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TSHR P16473 5/20 0.42
THRB P10828 1/20 0.42
EPHX1 P07099 1/20 0.36
DNM1 Q05193 5/20 0.33
ALDH1A1 P00352 4/20 0.33
LMNA P02545 2/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
HSD17B10 Q99714 1/20 0.33
SLC22A1 O15245 1/20 0.33
FAAH O00519 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7634048 0.78 TSHR (0.47) TSHRTHRBEPHX1DNM1ALDH1A1
SCHEMBL29139973 0.76 TSHR (0.44) TSHRTHRBEPHX1DNM1ALDH1A1
SCHEMBL4629786 0.74
SCHEMBL18991177 0.72 EPHX1 (0.46) TSHRTHRBEPHX1DNM1ALDH1A1
SCHEMBL7515018 0.71 TSHR (0.53) TSHRTHRBEPHX1DNM1ALDH1A1
SCHEMBL17629227 0.71 TSHR (0.53) TSHRTHRBEPHX1DNM1ALDH1A1
SCHEMBL561270 0.71 TSHR (0.53) TSHRTHRBEPHX1DNM1ALDH1A1
SCHEMBL15655834 0.71 TSHR (0.53) TSHRTHRBEPHX1DNM1ALDH1A1
SCHEMBL15658064 0.71 TSHR (0.53) TSHRTHRBEPHX1DNM1ALDH1A1
SCHEMBL15657098 0.71 TSHR (0.53) TSHRTHRBEPHX1DNM1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114388427-A Method and system for forming silicon nitride on sidewalls of features ASM IP私人控股有限公司 2022-04-22 CN claimed
CN-107794515-B Method for protecting a layer by forming an ultra-thin hydrocarbon-based film ASM IP控股有限公司 2021-06-22 CN claimed
CN-107794515-A By forming the method protected based on the ultrathin membrane of hydrocarbon to layer ASM IP控股有限公司 2018-03-13 CN claimed
CN-113249706-B Methods for depositing gap-fill fluids and related systems and apparatus ASM IP私人控股有限公司 2025-04-04 CN disclosed
CN-110176392-B Spacer-defined direct patterning method in semiconductor fabrication ASM IP控股有限公司 2024-09-10 CN disclosed
CN-108122739-B Method of topologically limited plasma enhanced cyclical deposition ASM IP控股有限公司 2023-07-21 CN disclosed
CN-114388427-A Method and system for forming silicon nitride on sidewalls of features ASM IP私人控股有限公司 2022-04-22 CN disclosed
CN-108728824-B Method for plasma-assisted cyclic deposition using ramp-down flow of reactant gas ASM IP控股有限公司 2022-01-11 CN disclosed
CN-107794515-B Method for protecting a layer by forming an ultra-thin hydrocarbon-based film ASM IP控股有限公司 2021-06-22 CN disclosed
CN-110176392-A The direct patterning method that spacer in semiconductors manufacture limits ASM IP控股有限公司 2019-08-27 CN disclosed
CN-108728824-A The method for carrying out plasmaassisted cyclic deposition using the reaction gas of oblique deascension flow ASM IP控股有限公司 2018-11-02 CN disclosed
CN-107794515-A By forming the method protected based on the ultrathin membrane of hydrocarbon to layer ASM IP控股有限公司 2018-03-13 CN disclosed