⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL28775600 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL511076 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL28246699 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL27806158 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL15092776 | 0.87 | — | — | |
| SCHEMBL301648 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL9277812 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL4255509 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL10637653 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL10722749 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 260 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118792738-B | Stress regulation structure, preparation method and application in gallium nitride single crystal wafer preparation process | 中国科学院半导体研究所 | 2025-04-04 | — | — | CN | claimed |
| CN-118792738-A | Stress regulation structure, preparation method and application in gallium nitride single crystal wafer preparation process | 中国科学院半导体研究所 | 2024-10-18 | — | — | CN | claimed |
| CN-118676274-A | Light emitting diode epitaxial structure, display panel and electronic equipment | 华为技术有限公司 | 2024-09-20 | — | — | CN | claimed |
| CN-110752279-B | Ultraviolet light-emitting diode with ultrathin aluminum indium nitrogen insertion layer and preparation method thereof | 广东省半导体产业技术研究院 | 2024-04-26 | — | — | CN | claimed |
| CN-117737839-A | Method for smoothing aluminum indium nitrogen epitaxial film through trimethyl indium preflow | 厦门大学 | 2024-03-22 | — | — | CN | claimed |
| CN-117334750-A | Junction barrier Schottky diode with floating island | 无锡市乾野微纳科技有限公司 | 2024-01-02 | — | — | CN | claimed |
| CN-117334734-A | InAlN/GaN high electron mobility transistor with graded back barrier buffer layer and manufacturing method | 中国科学院半导体研究所 | 2024-01-02 | — | — | CN | claimed |
| CN-117133642-A | Semiconductor device and method for manufacturing the same | 华为技术有限公司 | 2023-11-28 | — | — | CN | claimed |
| CN-111653473-B | Silicon-based gallium nitride microwave device material structure with enhanced heat dissipation | 西安电子科技大学 | 2023-10-13 | — | — | CN | claimed |
| CN-115472691-A | Transistor and preparation method thereof | 西安电子科技大学 | 2022-12-13 | — | — | CN | claimed |
| CN-102427084-B | Gallium-nitride-based high electron mobility transistor and manufacturing method | INST SEMICONDUCTORS CAS | 2013-08-07 | — | — | CN | claimed |
| CN-103219646-A | Light amplifier | CHANGZHOU LEISAI TECHNOLOGY CO LTD | 2013-07-24 | — | — | CN | claimed |
| CN-102856359-A | Semiconductor epitaxial structure and production method thereof | CHENG KAI | 2013-01-02 | — | — | CN | claimed |
| CN-102427084-A | Gallium nitride based high electron mobility transistor and manufacturing method thereof | INST SEMICONDUCTORS CAS | 2012-04-25 | — | — | CN | claimed |
| CN-101367510-B | Method for growing indium containing nitride nano-material by employing hydrogen autocatalysis method | INST SEMICONDUCTORS CAS | 2010-06-23 | — | — | CN | claimed |
| CN-100587912-C | Method for preparing nitride quantum point | UNIV HEBEI SCIENCE & TECH | 2010-02-03 | — | — | CN | claimed |
| CN-101404247-A | Method for preparing nitride quantum point | UNIV HEBEI SCIENCE & TECH (CN) | 2009-04-08 | — | — | CN | claimed |
| CN-101367510-A | Method for growing indium containing nitride nano-material by employing hydrogen autocatalysis method | INST OF SEMICONDUCTORS CAS (CN) | 2009-02-18 | — | — | CN | claimed |
| CN-100336235-C | Gallium nitride series light-emitting diode structure | CANYUAN PHOTOELECTRIC CO LTD (CN) | 2007-09-05 | — | — | CN | claimed |
| CN-1747186-A | Gallium nitride series light-emitting diode structure | CANYUAN PHOTOELECTRIC CO LTD (CN) | 2006-03-15 | — | — | CN | claimed |