SCHEMBL301648

SCHEMBL301648

[AlH3].[InH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5534260 0.82
SCHEMBL1535961 0.82
SCHEMBL3382311 0.82
SCHEMBL1628265 0.82
SCHEMBL3419870 0.82
SCHEMBL497876 0.82
SCHEMBL184933 0.82
Arsenic SCHEMBL2458467 0.82
Phosphine SCHEMBL735540 0.82
Ammonia Solution, Strong SCHEMBL2820970 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 743 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118510368-A Indium aluminum ball bump microcrystalline structure layer 翁彬 2024-08-16 CN claimed
CN-118460965-A Metal heating film and ceramic heating body for electronic atomization device 思摩尔国际控股有限公司 2024-08-09 CN claimed
US-20240247539-A1 AUTOMATED ASSEMBLY METHODS FOR MOUNTING SOLAR CELLS ON SPACE PANELS SOLAERO TECHNOLOGIES CORP. (US) 2024-07-25 US claimed
EP-3144979-B1 ANTIMONIDE-BASED HIGH BANDGAP TUNNEL JUNCTION FOR SEMICONDUCTOR DEVICES BOEING CO (US) 2024-05-08 EP claimed
US-11935948-B2 HEMT and method of fabricating the same UNITED MICROELECTRONICS CORP. (TW) 2024-03-19 US claimed
CN-111446273-B Display panel and electronic device 日本显示器设计开发合同会社 2023-09-19 CN claimed
US-11688801-B2 HEMT and method of fabricating the same UNITED MICROELECTRONICS CORP. (TW) 2023-06-27 US claimed
US-20230085517-A1 HEMT AND METHOD OF FABRICATING THE SAME UNITED MICROELECTRONICS CORP. (TW) 2023-03-16 US claimed
US-20220190149-A1 HEMT AND METHOD OF FABRICATING THE SAME UNITED MICROELECTRONICS CORP. (TW) 2022-06-16 US claimed
CN-111081788-B Indium aluminum zinc oxide diode with Schottky contact at bottom and preparation method thereof 山东大学 2021-06-29 CN claimed
WO-2009099259-A1 NANODEVICE, TRANSISTOR COMPRISING THE NANODEVICE, METHOD FOR MANUFACTURING THE NANODEVICE, AND METHOD FOR MANUFACTURING THE TRANSISTOR POSTECH ACADEMY-INDUSTRY FOUNDATION (KR) 2009-08-13 WO claimed
CN-101337274-A Aluminum indium stannum alloy powder of nucleus/shell structure and preparation method thereof UNIV XIAMEN (CN) 2009-01-07 CN claimed
CN-101104548-A Low-resistance P-type tin dioxide thin film material doped with indium and aluminum and preparation method thereof UNIV HANGZHOU DIANZI (CN) 2008-01-16 CN claimed
US-20030166325-A1 Low base-emitter voltage heterojunction bipolar transistor HRL LABORATORIES, LLC 2003-09-04 US claimed
WO-2003052832-A2 LOW BASE-EMITTER VOLTAGE HETEROJUNCTION BIPOLAR TRASISTOR HRL LABORATORIES, LLC (US) 2003-06-26 WO claimed
WO-2002099860-A1 METHOD OF PREPARING NITROGEN CONTAINING SEMICONDUCTOR MATERIAL MIDWEST RESEARCH INSTITUTE (US) 2002-12-12 WO claimed
WO-2000059550-A2 INDIUM-114M AND RELATED COMPOSITIONS APPLICABLE IN BRACHYTHERAPIE UT-BATTELLE LLC (US) 2000-10-12 WO claimed
EP-0390262-A1 Radiation-emitting semiconductor device and method of manufacturing such a semiconductor device Koninklijke Philips Electronics N.V. (NL) 1990-10-03 EP claimed
US-4350541-A Doping from a photoresist layer NIPPON TELEGRAPH & TELEPHONE PUBLIC CORP. (JP) 1982-09-21 US claimed
US-4172922-A CONDUCTIVE PARTICLES OF ZINC OXIDE AND A METAL DISPERSED IN GLASS FIRT TRW, INC. (US) 1979-10-30 US claimed