Known targets — ChEMBL curated mechanism
ACHEADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3APH1AAPH1BCHRM2CHRM3EZH2GRIN2AHTR1AHTR1BHTR1DHTR1FHTR3ANCSTNP2RY12PSEN1PSEN2PSENENSIGMAR1SLC6A2SLC6A3SLC6A4
The experimentally established mechanism targets of Acrylamide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acrylamide SCHEMBL28077429 | 0.96 | ALDH1A1 (0.92) | — | |
| Acrylamide SCHEMBL21525152 | 0.96 | ALDH1A1 (0.92) | — | |
| Acrylamide SCHEMBL27991718 | 0.96 | — | — | |
| Acrylamide SCHEMBL9848722 | 0.96 | ALDH1A1 (0.92) | — | |
| Acrylamide SCHEMBL9578578 | 0.96 | — | — | |
| Acrylamide SCHEMBL1225106 | 0.96 | — | — | |
| Acrylamide SCHEMBL28280474 | 0.96 | — | — | |
| Acrylamide SCHEMBL17685704 | 0.92 | ALDH1A1 (0.85) | — | |
| Acrylamide SCHEMBL21001929 | 0.92 | — | — | |
| Acrylamide SCHEMBL2679162 | 0.92 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-104143494-B | There is the plasma processing chamber component that protective layer is formed in situ in plasma exposure face | 朗姆研究公司 | 2018-08-14 | — | — | CN | claimed |
| CN-104143494-A | Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface | LAM RES CORP | 2014-11-12 | — | — | CN | claimed |
| CN-104143494-B | There is the plasma processing chamber component that protective layer is formed in situ in plasma exposure face | 朗姆研究公司 | 2018-08-14 | — | — | CN | disclosed |
| CN-104143494-A | Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface | LAM RES CORP | 2014-11-12 | — | — | CN | disclosed |