Acrylamide

Acrylamide

SCHEMBL28224765

Br.C=CC(N)=O.N

nearest known ligand 0.00

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Known targets — ChEMBL curated mechanism

ACHEADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3APH1AAPH1BCHRM2CHRM3EZH2GRIN2AHTR1AHTR1BHTR1DHTR1FHTR3ANCSTNP2RY12PSEN1PSEN2PSENENSIGMAR1SLC6A2SLC6A3SLC6A4

The experimentally established mechanism targets of Acrylamide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Acrylamide SCHEMBL28077429 0.96 ALDH1A1 (0.92) —
Acrylamide SCHEMBL21525152 0.96 ALDH1A1 (0.92) —
Acrylamide SCHEMBL27991718 0.96 — —
Acrylamide SCHEMBL1225106 0.96 — —
Acrylamide SCHEMBL9578578 0.96 — —
Acrylamide SCHEMBL9848722 0.96 ALDH1A1 (0.92) —
Acrylamide SCHEMBL28280474 0.96 — —
Acrylamide SCHEMBL4865873 0.92 ALDH1A1 (0.85) —
Acrylamide SCHEMBL21001929 0.92 — —
Acrylamide SCHEMBL17685704 0.92 ALDH1A1 (0.85) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-104143494-B There is the plasma processing chamber component that protective layer is formed in situ in plasma exposure face 朗姆研究公司 2018-08-14 — — CN claimed
CN-104143494-A Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface LAM RES CORP 2014-11-12 — — CN claimed
CN-104143494-B There is the plasma processing chamber component that protective layer is formed in situ in plasma exposure face 朗姆研究公司 2018-08-14 — — CN disclosed
CN-104143494-A Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface LAM RES CORP 2014-11-12 — — CN disclosed
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