SCHEMBL28397886

SCHEMBL28397886

NCCN(CCO)C(CC(=O)O)C(=O)O

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
GABRR1 P24046 2/20 0.33
LMNA P02545 1/20 0.33
TDP1 Q9NUW8 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.31
EPOR P19235 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8657775 0.92 GABRR1 (0.38) GABRR1LMNATDP1SMN1; SMN2EPOR
SCHEMBL2450587 0.90 TDP1 (0.39) GABRR1LMNATDP1SMN1; SMN2EPOR
SCHEMBL8661608 0.84
SCHEMBL8657479 0.82
SCHEMBL8659318 0.81 TDP1 (0.31) TDP1
SCHEMBL14342937 0.80 GABRR1 (0.36) GABRR1LMNATDP1SMN1; SMN2
SCHEMBL14558025 0.79 TDP1 (0.33) TDP1SMN1; SMN2EPOR
SCHEMBL8950943 0.79 ALOX15 (0.30)
SCHEMBL8655918 0.78
SCHEMBL3425122 0.78 GABRR1 (0.33) GABRR1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110777381-B Composition for TiN hardmask removal and etch residue cleaning 弗萨姆材料美国有限责任公司 2022-10-04 CN claimed
CN-110777381-A Composition for TiN hardmask removal and etch residue cleaning 弗萨姆材料美国有限责任公司 2020-02-11 CN claimed
CN-110777381-B Composition for TiN hardmask removal and etch residue cleaning 弗萨姆材料美国有限责任公司 2022-10-04 CN disclosed
CN-114761878-A Etching composition and method for EUV mask protection structure 弗萨姆材料美国有限责任公司 2022-07-15 CN disclosed
CN-110777381-A Composition for TiN hardmask removal and etch residue cleaning 弗萨姆材料美国有限责任公司 2020-02-11 CN disclosed