SCHEMBL28397889

SCHEMBL28397889

CC(N)N(CCO)C(CC(=O)O)C(=O)O

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
BHMT Q93088 1/20 0.33
CACNA2D1 P54289 2/20 0.32
CACNB3 P54284 1/20 0.32
CACNA1C Q13936 1/20 0.32
PGR P06401 1/20 0.32
ADRA1A P35348 1/20 0.32
HTR2B P41595 1/20 0.32
CACNA2D2 Q9NY47 1/20 0.32
GABRP O00591 2/20 0.31
GABRD O14764 2/20 0.31
GABRA1 P14867 2/20 0.31
GABRB1 P18505 2/20 0.31
GABRG2 P18507 2/20 0.31
GABRB3 P28472 2/20 0.31
GABRA5 P31644 2/20 0.31
GABRA3 P34903 2/20 0.31
GABRA2 P47869 2/20 0.31
GABRB2 P47870 2/20 0.31
GABRA4 P48169 2/20 0.31
GABRE P78334 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL629344 0.85 TDP1 (0.39) TDP1SMN1; SMN2
SCHEMBL7108167 0.80 TDP1 (0.32) TDP1SMN1; SMN2
SCHEMBL8080978 0.76 GABRP (0.39) BHMTCACNA2D1CACNB3CACNA1CPGR
SCHEMBL16163213 0.74 TDP1 (0.43) ADRA1ATDP1SMN1; SMN2
SCHEMBL12534416 0.73 TDP1 (0.36) TDP1SMN1; SMN2
SCHEMBL2450587 0.72 TDP1 (0.39) TDP1SMN1; SMN2
SCHEMBL1997913 0.71 GABRR1 (0.38) CACNA2D1CACNB3CACNA1CPGRADRA1A
SCHEMBL7807211 0.71 GABRR1 (0.38) CACNA2D1CACNB3CACNA1CPGRADRA1A
SCHEMBL5319076 0.71 GABRR1 (0.38) CACNA2D1CACNB3CACNA1CPGRADRA1A
SCHEMBL9453155 0.71 TDP1 (0.37) TDP1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110777381-B Composition for TiN hardmask removal and etch residue cleaning 弗萨姆材料美国有限责任公司 2022-10-04 CN claimed
CN-110777381-A Composition for TiN hardmask removal and etch residue cleaning 弗萨姆材料美国有限责任公司 2020-02-11 CN claimed
CN-110777381-B Composition for TiN hardmask removal and etch residue cleaning 弗萨姆材料美国有限责任公司 2022-10-04 CN disclosed
CN-114761878-A Etching composition and method for EUV mask protection structure 弗萨姆材料美国有限责任公司 2022-07-15 CN disclosed
CN-110777381-A Composition for TiN hardmask removal and etch residue cleaning 弗萨姆材料美国有限责任公司 2020-02-11 CN disclosed