Known targets — ChEMBL curated mechanism
CHRM1DRD2DRD3DRD4HDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR2APDE3ASIGMAR1
The experimentally established mechanism targets of Lactic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TBXAS1 | P24557 | 19/20 | 0.71 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Lactic Acid SCHEMBL29271999 | 1.00 | TBXAS1 (0.71) | TBXAS1 | |
| Lactic Acid SCHEMBL28507622 | 0.98 | TBXAS1 (0.68) | TBXAS1 | |
| Lactic Acid SCHEMBL28122063 | 0.94 | TBXAS1 (0.62) | TBXAS1 | |
| Bicarbonate SCHEMBL29271981 | 0.89 | TBXAS1 (0.83) | TBXAS1 | |
| Bicarbonate SCHEMBL28558157 | 0.89 | TBXAS1 (0.83) | TBXAS1 | |
| Acetic Acid SCHEMBL28899026 | 0.88 | TBXAS1 (0.80) | TBXAS1 | |
| Acetic Acid SCHEMBL29193998 | 0.88 | TBXAS1 (0.80) | TBXAS1 | |
| Acetic Acid SCHEMBL28714374 | 0.88 | TBXAS1 (0.80) | TBXAS1 | |
| Lactic Acid SCHEMBL15334027 | 0.88 | TBXAS1 (0.57) | TBXAS1 | |
| Oxalic Acid SCHEMBL29575392 | 0.88 | TBXAS1 (0.80) | TBXAS1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111653767-B | Washing process and preparation method of high-nickel polycrystalline ternary cathode material | 乳源东阳光磁性材料有限公司 | 2021-10-01 | — | — | CN | claimed |
| CN-115321585-A | Washing process of indium hydroxide | 先导薄膜材料有限公司 | 2022-11-11 | — | — | CN | disclosed |
| CN-111653767-B | Washing process and preparation method of high-nickel polycrystalline ternary cathode material | 乳源东阳光磁性材料有限公司 | 2021-10-01 | — | — | CN | disclosed |
| CN-111653767-A | Washing process and preparation method of high-nickel polycrystalline ternary cathode material | 乳源东阳光磁性材料有限公司 | 2020-09-11 | — | — | CN | disclosed |