Fluoride

Fluoride

SCHEMBL2853593

F.[H+]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL28416500 1.00
Fluoride SCHEMBL701965 1.00
Fluoride SCHEMBL27715055 1.00
Fluoride SCHEMBL623572 0.82
Fluoride SCHEMBL3038548 0.82
Fluoride SCHEMBL8051073 0.82
Fluoride SCHEMBL2814762 0.82
Hydrochloric Acid SCHEMBL21647192 0.82
Fluoride SCHEMBL16237737 0.82
Fluoride SCHEMBL17600626 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101421859-B GaN-based semiconductor light emitting device and method of manufacturing the same SHOWA DENKO KK 2011-03-30 CN claimed
CN-101429092-A Process for the treatment of the by-products from a reaction for the production of organic compounds SOLVAY (BE) 2009-05-13 CN claimed
CN-101421859-A GaN-based semiconductor light emitting device and method of manufacturing the same SHOWA DENKO KK (JP) 2009-04-29 CN claimed
CN-1545494-A Method for treating by-products from reactions for producing organic compounds 索尔维公司 2004-11-10 CN claimed
US-6627001-B2 Method for cleaning a semiconductor wafer MACRONIX INTERNATIONAL CO., LTD. (TW) 2003-09-30 US claimed
US-20020166572-A1 Method for cleaning a semiconductor wafer MACRONIX INTERNATIONAL CO., LTD. (TW) 2002-11-14 US claimed
CN-108807223-B Substrate processing apparatus and substrate processing method 株式会社斯库林集团 2022-03-01 CN disclosed
CN-110416184-B Semiconductor structure and forming method thereof 台湾积体电路制造股份有限公司 2021-10-08 CN disclosed
CN-108336127-B Silicon carbide substrate, semiconductor device, and methods for manufacturing silicon carbide substrate and semiconductor device 住友电气工业株式会社 2021-09-24 CN disclosed
CN-110416184-A Semiconductor structure and forming method thereof TAIWAN SEMICONDUCTOR MFG CO LTD 2019-11-05 CN disclosed
CN-108886005-A Concentration of carbon measuring method, the manufacturing method of silicon single crystal ingot, silicon single crystal ingot and the silicon wafer of silicon sample 胜高股份有限公司 2018-11-23 CN disclosed
CN-108807223-A Substrate processing apparatus and substrate processing method 株式会社斯库林集团 2018-11-13 CN disclosed
CN-108336127-A Silicon carbide substrates, semiconductor device and their manufacturing method 住友电气工业株式会社 2018-07-27 CN disclosed
US-20030134491-A1 Vapor growth method, semiconductor producing method, and production method for semiconductor device SONY CORPORATION (JP) 2003-07-17 US disclosed
CN-1363540-A Catalyst system for ethylene oligomerization and its preparing process and application CHINESE ACAD INST CHEMISTRY (CN) 2002-08-14 CN disclosed
US-6416586-B1 MULTISTAGE PROCESS; USING AQUEOUS SOLUTION Ohmi, Tadahiro (JP) 2002-07-09 US disclosed
US-6325081-B1 Washing apparatus and washing method KABUSHIKI KAISHA ULTRACLEAN TECHNOLOGY RESEARCH INSTITUTE (JP) 2001-12-04 US disclosed
US-6058945-A Cleaning methods of porous surface and semiconductor surface CANON KABUSHIKI KAISHA (JP) 2000-05-09 US disclosed
EP-0810643-A2 Method for cleaning a porous surface of a semiconductor substrate CANON KABUSHIKI KAISHA (JP) 1997-12-03 EP disclosed
CN-1166693-A Cleaning methods of porous surface and semiconductor surface CANON KK (JP) 1997-12-03 CN disclosed