⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14301484 | 1.00 | — | — | |
| Trifluoromethanesulfonic Acid SCHEMBL5866306 | 0.82 | CA1 (0.38) | — | |
| SCHEMBL5918112 | 0.80 | CA1 (0.48) | — | |
| SCHEMBL13766051 | 0.76 | — | — | |
| SCHEMBL10628880 | 0.76 | — | — | |
| SCHEMBL23631939 | 0.76 | — | — | |
| SCHEMBL15048937 | 0.76 | — | — | |
| SCHEMBL1117680 | 0.76 | — | — | |
| SCHEMBL2332955 | 0.76 | — | — | |
| SCHEMBL11058566 | 0.76 | KDM4E (0.50) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | claimed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | disclosed |
| CN-114600045-B | Photosensitive resin composition, photosensitive dry film and pattern forming method | 信越化学工业株式会社 | 2025-05-09 | — | — | CN | disclosed |
| CN-119827495-A | Method for testing alkali purity, alkali strength and alkali residue by using photoetching machine | 上海微悦芯材新材料有限责任公司 | 2025-04-15 | — | — | CN | disclosed |
| CN-119827496-A | Method for testing acid strength and acid production efficiency by using photoetching machine and application | 上海微悦芯材新材料有限责任公司 | 2025-04-15 | — | — | CN | disclosed |
| CN-111338181-B | Photosensitive resin composition, photosensitive dry film and pattern forming method | 信越化学工业株式会社 | 2024-11-26 | — | — | CN | disclosed |
| CN-118974186-A | Ink composition, light shielding member, and image display device | 耐涂可株式会社 | 2024-11-15 | — | — | CN | disclosed |
| CN-117501179-A | Method of using composition containing organic acid compound, lithographic composition containing organic acid compound, and method of manufacturing resist pattern | 默克专利有限公司 | 2024-02-02 | — | — | CN | disclosed |
| CN-107615168-B | Radiation-sensitive composition | 日产化学工业株式会社 | 2023-12-19 | — | — | CN | disclosed |
| CN-117008420-A | Radiation-sensitive composition | 日产化学工业株式会社 | 2023-11-07 | — | — | CN | disclosed |
| CN-116113885-A | Method for using composition containing carboxylic acid ester, lithographic composition containing carboxylic acid ester, and method for producing resist pattern | 默克专利有限公司 | 2023-05-12 | — | — | CN | disclosed |
| CN-106610566-B | Chemically amplified positive resist composition and patterning method | 信越化学工业株式会社 | 2021-10-08 | — | — | CN | disclosed |
| CN-106444288-B | Chemically amplified positive resist composition and pattern forming method | 信越化学工业株式会社 | 2021-04-09 | — | — | CN | disclosed |