SCHEMBL2862401

SCHEMBL2862401

Cc1c(C)c(S(=O)(=O)O)c(C)c(C)c1S(=O)(=O)O

nearest known ligand 0.37

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
FABP4 P15090 2/20 0.37
FABP3 P05413 1/20 0.37
FABP5 Q01469 1/20 0.37
KDM4E B2RXH2 1/20 0.34
POLB P06746 1/20 0.34
APEX1 P27695 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
CA5A P35218 1/20 0.33
CA5B Q9Y2D0 1/20 0.33
TSHR P16473 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2869222 0.97 FABP4 (0.38) FABP4FABP3FABP5KDM4EPOLB
Hydrochloric Acid SCHEMBL11010689 0.94 FABP4 (0.36) FABP4FABP3FABP5KDM4EPOLB
SCHEMBL83879 0.94 FABP4 (0.36) FABP4FABP3FABP5KDM4EPOLB
Ammonia Solution, Strong SCHEMBL9809148 0.94 FABP4 (0.36) FABP4FABP3FABP5KDM4EPOLB
SCHEMBL28147772 0.90 FABP4 (0.36) FABP4FABP3FABP5KDM4EPOLB
SCHEMBL11783087 0.88 FABP4 (0.32) FABP4FABP3FABP5KDM4EPOLB
SCHEMBL27798197 0.86 DAPK1 (0.32) FABP4FABP3FABP5KDM4ETSHR
SCHEMBL7121356 0.86 FABP4 (0.37) FABP4FABP3FABP5KDM4EPOLB
SCHEMBL27843854 0.84 FABP4 (0.32) FABP4FABP3FABP5
SCHEMBL27942866 0.82 FABP4 (0.32) FABP4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103503121-B Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method for manufacturing same, and solar cell element and method for manufacturing same 日立化成株式会社 2017-04-12 CN disclosed
US-9406834-B2 Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same HITACHI CHEMICAL COMPANY, LTD. (JP) 2016-08-02 US disclosed
US-20140242741-A1 MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME HITACHI CHEMICAL COMPANY, LTD. (JP) 2014-08-28 US disclosed
US-8748877-B2 Material for forming passivation film for semiconductor substrate, passivation film for semiconductor substrate and method of producing the same, and photovoltaic cell element and method of producing the same HITACHI CHEMICAL COMPANY, LTD. (JP) 2014-06-10 US disclosed
US-20120313199-A1 MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME HITACHI CHEMICAL COMPANY, LTD. 2012-12-13 US disclosed
US-7754844-B2 Polyarylene ether compound containing sulfonic acid group, composition containing same, and method for manufacturing those TOYO BOSEKI KABUSHIKI KAISHA (JP) 2010-07-13 US disclosed
EP-1561768-B1 POLYARYLENE ETHER COMPOUND CONTAINING SULFONIC ACID GROUP, COMPOSITION CONTAINING SAME, AND METHOD FOR MANUFACTURING THOSE TOYO BOSEKI (JP) 2009-09-30 EP disclosed
US-20080070086-A1 Phase-Separated Polymer Electrolyte Membrane, Electrode - Phase-Separated Polymer Electrolyte Membrane Joint Using Same, Method for Manufacture Thereof, and Fuel Cell Using Same HITACHI CHEMICAL COMPANY, LTD. (JP) 2008-03-20 US disclosed
EP-1845573-A1 PHASE SEPARATION TYPE POLYMER ELECTROLYTE FILM, ELECTRODE/PHASE SEPARATION TYPE POLYMER ELECTROLYTE FILM ASSEMBLY EMPLOYING THE SAME, PROCESSES FOR PRODUCING THE SAME, AND FUEL CELL EMPLOYING THE SAME Hitachi Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
CN-1292015-C Polyarylene ether compound containing sulfonic acid group, composition containing same, and method for manufacturing those TOYO BOSEKI (JP) 2006-12-27 CN disclosed
US-20060166048-A1 Polyarylene ether compound containing sulfonic acid group, composition containing same, and method for manufacturing those TOYO BOSEKI KABUSHIKI KAISHA (JP) 2006-07-27 US disclosed
CN-1703443-A Polyarylene ether compound containing sulfonic acid group, composition containing the same, and method for producing the same TOYO BOSEKI (JP) 2005-11-30 CN disclosed
EP-1561768-A1 POLYARYLENE ETHER COMPOUND CONTAINING SULFONIC ACID GROUP, COMPOSITION CONTAINING SAME, AND METHOD FOR MANUFACTURING THOSE Toyo Boseki Kabushiki Kaisha (JP) 2005-08-10 EP disclosed
US-5596128-A SULFONATION WITHOUT A CATALYST IN THE PRESENCE OF SOLVENT KONISHI CHEMICAL IND. CO., LTD. (JP) 1997-01-21 US disclosed
EP-0505582-B1 SULFONATING AGENT AND PROCESS KONISHI CHEM IND (JP) 1996-07-31 EP disclosed
EP-0505582-A1 SULFONATING AGENT AND PROCESS KONISHI CHEMICAL IND. CO., LTD. (JP) 1992-09-30 EP disclosed