SCHEMBL2864301

SCHEMBL2864301

CO[Si](C)(C)c1cc([Si](C)(C)OC)c([Si](C)(C)OC)cc1[Si](C)(C)OC

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2961092 0.75 CA4 (0.36) ALDH1A1
SCHEMBL2860931 0.73 ALDH1A1 (0.30) ALDH1A1
SCHEMBL15735679 0.73
SCHEMBL15736854 0.70
SCHEMBL1639605 0.69
SCHEMBL5010137 0.69 ALDH1A1 (0.32) ALDH1A1
SCHEMBL15736274 0.69 ALDH1A1 (0.37) ALDH1A1
SCHEMBL1318702 0.68 TSHR (0.41) ALDH1A1
SCHEMBL12977035 0.67 NR1H2 (0.38)
SCHEMBL5460401 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2154708-B1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHINETSU CHEMICAL CO (JP) 2017-07-26 EP disclosed
US-8277600-B2 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-02 US disclosed
US-20100040895-A1 HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-18 US disclosed
EP-2154708-A1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-02-17 EP disclosed