SCHEMBL2865853

SCHEMBL2865853

O=[AlH].[GaH3].[LiH]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL56096 0.89
SCHEMBL41523 0.89
SCHEMBL15209472 0.80
SCHEMBL7702717 0.80
SCHEMBL5574528 0.80
SCHEMBL6883331 0.80
SCHEMBL20915012 0.80
SCHEMBL20982042 0.80
SCHEMBL21175556 0.80
SCHEMBL4890346 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7713812-B2 Method for manufacturing semiconductor thin film PANASONIC CORPORATION (JP) 2010-05-11 US claimed
US-20060121695-A1 Method for manufacturing semiconductor thin film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-06-08 US claimed
US-7008839-B2 Method for manufacturing semiconductor thin film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-03-07 US claimed
US-6887770-B2 Method for fabricating semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-05-03 US claimed
US-20050042788-A1 Semiconductor device and method for manufacturing the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-02-24 US claimed
US-6797532-B2 Semiconductor device and method for manufacturing the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-09-28 US claimed
US-20040110395-A1 Method for fabricating semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-06-10 US claimed
US-20040079994-A1 Semiconductor device and method for manufacturing the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-04-29 US claimed
US-20030186475-A1 Method for manufacturing semiconductor thin film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2003-10-02 US claimed
US-7713812-B2 Method for manufacturing semiconductor thin film PANASONIC CORPORATION (JP) 2010-05-11 US disclosed
US-20060121695-A1 Method for manufacturing semiconductor thin film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-06-08 US disclosed
US-7008839-B2 Method for manufacturing semiconductor thin film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-03-07 US disclosed
US-6887770-B2 Method for fabricating semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-05-03 US disclosed
US-20050042788-A1 Semiconductor device and method for manufacturing the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-02-24 US disclosed
US-6797532-B2 Semiconductor device and method for manufacturing the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-09-28 US disclosed
US-20040110395-A1 Method for fabricating semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-06-10 US disclosed
US-20040079994-A1 Semiconductor device and method for manufacturing the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-04-29 US disclosed
US-20040065889-A1 Semiconductor wafer, semiconductor device, and methods for fabricating the same MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-04-08 US disclosed
US-20030186475-A1 Method for manufacturing semiconductor thin film MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2003-10-02 US disclosed