⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4890346 | 0.89 | — | — | |
| SCHEMBL2865853 | 0.89 | — | — | |
| SCHEMBL887680 | 0.89 | — | — | |
| SCHEMBL447655 | 0.89 | — | — | |
| SCHEMBL350385 | 0.89 | — | — | |
| SCHEMBL29069471 | 0.89 | — | — | |
| SCHEMBL27816121 | 0.89 | — | — | |
| SCHEMBL15338 | 0.87 | — | — | |
| SCHEMBL29367621 | 0.87 | — | — | |
| SCHEMBL1128221 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 763 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12435415-B2 | Thermal atomic layer deposition of ternary gallium oxide thin films | ILLINOIS INSTITUTE OF TECHNOLOGY (US) | 2025-10-07 | — | — | US | claimed |
| CN-120138595-A | P-type IIIA group metal oxide semiconductor film and preparation method thereof | 香港科技大学(广州) | 2025-06-13 | — | — | CN | claimed |
| CN-117894832-A | Compound heterojunction p-type transistor and preparation method thereof | 湖北九峰山实验室 | 2024-04-16 | — | — | CN | claimed |
| US-20230261441-A1 | EMITTER WITH AN OXIDE-LAYER-BASED REFLECTOR PAIR | LUMENTUM OPERATIONS LLC | 2023-08-17 | — | — | US | claimed |
| CN-115842042-B | Epitaxial layer structure and preparation method and application thereof | 江苏能华微电子科技发展有限公司 | 2023-06-09 | — | — | CN | claimed |
| US-20230167548-A1 | THERMAL ATOMIC LAYER DEPOSITION OF TERNARY GALLIUM OXIDE THIN FILMS | ILLINOIS INSTITUTE OF TECHNOLOGY | 2023-06-01 | — | — | US | claimed |
| CN-115842042-A | Epitaxial layer structure and preparation method and application thereof | 江苏能华微电子科技发展有限公司 | 2023-03-24 | — | — | CN | claimed |
| US-11371134-B2 | Nanowire grid polarizer on a curved surface and methods of making and using | WOSTEC, INC. (US) | 2022-06-28 | — | — | US | claimed |
| US-20220123150-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LAB (JP) | 2022-04-21 | — | — | US | claimed |
| CN-111415978-B | Oxidation level heterogeneous p-n junction structure device and preparation method thereof | 深圳第三代半导体研究院 | 2022-02-15 | — | — | CN | claimed |
| US-8916865-B2 | Semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2014-12-23 | — | — | US | claimed |
| CN-104205296-A | Semiconductor device or crystal | FLOSFIA KK | 2014-12-10 | — | — | CN | claimed |
| US-8895976-B2 | Transistor and semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2014-11-25 | — | — | US | claimed |
| US-8878173-B2 | Semiconductor device including oxide semiconductor and metal oxide | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2014-11-04 | — | — | US | claimed |
| WO-2014142700-A1 | POLARIZER BASED ON A NANOWIRE GRID | WOSTEC INC. (US) | 2014-09-18 | — | — | WO | claimed |
| US-20130119402-A1 | LIGHT EMITTING DEVICE | LG INNOTEK CO., LTD. (KR) | 2013-05-16 | — | — | US | claimed |
| US-20120001170-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2012-01-05 | — | — | US | claimed |
| US-20120001179-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2012-01-05 | — | — | US | claimed |
| WO-2012002292-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2012-01-05 | — | — | WO | claimed |
| WO-2011158703-A1 | SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2011-12-22 | — | — | WO | claimed |