Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.35 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride SCHEMBL1811141 | 0.97 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Ammonia Solution, Strong SCHEMBL1170676 | 0.97 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Fluoride SCHEMBL28910326 | 0.97 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| SCHEMBL17607 | 0.94 | TSHR (0.39) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Methyl Alcohol SCHEMBL28027678 | 0.91 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Hydrochloric Acid SCHEMBL8075611 | 0.91 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Water SCHEMBL11295479 | 0.91 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Bromide SCHEMBL8460965 | 0.91 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Ethylene Glycol SCHEMBL28558188 | 0.91 | TSHR (0.37) | TSHRMAPK1ALDH1A1MEN1KMT2A | |
| Chloromethane SCHEMBL28006061 | 0.88 | TSHR (0.35) | TSHRMAPK1ALDH1A1MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116195036-A | Composition for selectively etching silicon-germanium material, use thereof and method | 巴斯夫欧洲公司 | 2023-05-30 | — | — | CN | claimed |
| CN-119615164-A | High-selectivity SiO (silicon dioxide) without damaging Cu and Ta barrier layers2Etching solution | 湖北兴福电子材料股份有限公司 | 2025-03-14 | — | — | CN | disclosed |
| CN-117946686-A | Composition for selectively etching aluminum oxide | 安集微电子科技（上海）股份有限公司 | 2024-04-30 | — | — | CN | disclosed |
| CN-114072482-A | Composition, use thereof and method for selectively etching silicon-germanium material | 巴斯夫欧洲公司 | 2022-02-18 | — | — | CN | disclosed |
| CN-113785040-A | Compositions and methods for selectively etching hard masks and/or etch stop layers in the presence of low-k materials, copper, cobalt, and/or tungsten layers | 巴斯夫欧洲公司 | 2021-12-10 | — | — | CN | disclosed |