⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6630211 | 0.67 | — | — | |
| SCHEMBL37550 | 0.59 | — | — | |
| SCHEMBL1332279 | 0.59 | — | — | |
| SCHEMBL472031 | 0.59 | — | — | |
| SCHEMBL2020 | 0.59 | — | — | |
| SCHEMBL23319705 | 0.56 | — | — | |
| Hydrochloric Acid SCHEMBL2049060 | 0.56 | — | — | |
| SCHEMBL4946636 | 0.56 | — | — | |
| SCHEMBL20507025 | 0.56 | — | — | |
| Ethane SCHEMBL22032756 | 0.56 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116936468-A | Copper interconnection diffusion barrier layer structure and preparation method thereof | 合肥安德科铭半导体科技有限公司 | 2023-10-24 | — | — | CN | claimed |
| CN-116936468-A | Copper interconnection diffusion barrier layer structure and preparation method thereof | 合肥安德科铭半导体科技有限公司 | 2023-10-24 | — | — | CN | disclosed |
| CN-116854727-A | Process for preparing metal dialkylamido halides, iminotris (dialkylamido) metal complexes and device system therefor | 天津绿菱气体有限公司 | 2023-10-10 | — | — | CN | disclosed |
| CN-115955910-A | Integrated circuit device | 三星电子株式会社 | 2023-04-11 | — | — | CN | disclosed |
| CN-115528172-A | Integrated circuit device and method of manufacturing the same | 三星电子株式会社 | 2022-12-27 | — | — | CN | disclosed |
| CN-113862635-A | Method of forming material layer, semiconductor device, and method of manufacturing semiconductor device | 三星电子株式会社 | 2021-12-31 | — | — | CN | disclosed |