SCHEMBL2876222

SCHEMBL2876222

NC([SiH3])[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11407141 0.83
SCHEMBL2631383 0.72
SCHEMBL28419586 0.72
SCHEMBL233695 0.61
SCHEMBL149877 0.61
SCHEMBL19658328 0.55
Hydrochloric Acid SCHEMBL9549754 0.55
Ammonia Solution, Strong SCHEMBL5202738 0.55
SCHEMBL23628375 0.50
SCHEMBL8584788 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-20250297360-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-09-25 US claimed
US-12392038-B2 Thin-film deposition method and system ASM IP HOLDING B.V. (NL) 2025-08-19 US claimed
US-20250253145-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-08-07 US claimed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US claimed
US-20230126516-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2023-04-27 US claimed
US-20230089397-A1 AIR GAP FORMING METHOD AND SELECTIVE DEPOSITION METHOD ASM IP HOLDING B.V. (NL) 2023-03-23 US claimed
CN-115807217-A Air gap forming method and selective deposition method ASM IP私人控股有限公司 2023-03-17 CN claimed
US-9887080-B2 Method of forming SiOCN material layer and method of fabricating semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-06 US claimed
US-20170186603-A1 METHOD OF FORMING SiOCN MATERIAL LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-06-29 US claimed
JP-2010539730-A 2010-12-16 JP claimed
EP-2193541-A1 METHOD OF FORMING SILICON-CONTAINING FILMS L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2010-06-09 EP claimed
WO-2009039251-A1 METHOD OF FORMING SILICON-CONTAINING FILMS L'AIR LIQUIDE - SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2009-03-26 WO claimed
US-20090075490-A1 METHOD OF FORMING SILICON-CONTAINING FILMS L'AIR LIQUITE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2009-03-19 US claimed
US-20260092360-A1 CYCLICAL DEPOSITION METHOD INCLUDING TREATMENT STEP AND APPARATUS FOR SAME ASM IP HOLDING BV (NL) 2026-04-02 US disclosed
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US disclosed
US-20250297360-A1 SUBSTRATE PROCESSING METHOD ASM IP HOLDING B.V. (NL) 2025-09-25 US disclosed
WO-2003060192-A1 NON-TOXIC CORROSION-PROTECTION RINSES AND SEALS BASED ON COBALT UNIVERSITY OF DAYTON (US) 2003-07-24 WO disclosed
WO-2003060191-A2 NON-TOXIC CORROSION-PROTECTION CONVERSION COATINGES ABSED ON COBALT UNIVERSITY OF DAYTON (US) 2003-07-24 WO disclosed
WO-2003060019-A1 NON-TOXIC CORROSION PROTECTION PIGMENTS BASED ON COBALT UNIVERSITY OF DAYTON (US) 2003-07-24 WO disclosed