⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2346595 | 0.87 | — | — | |
| SCHEMBL573678 | 0.87 | — | — | |
| SCHEMBL2351482 | 0.87 | — | — | |
| SCHEMBL28318 | 0.82 | — | — | |
| SCHEMBL5435835 | 0.78 | — | — | |
| SCHEMBL6311060 | 0.71 | — | — | |
| SCHEMBL8013430 | 0.67 | — | — | |
| SCHEMBL1360571 | 0.67 | — | — | |
| SCHEMBL10796443 | 0.67 | — | — | |
| SCHEMBL3164255 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1209750-B1 | Npn-heterojunction bipolar transistor including an antimonide base formed on semi-insulating indium phosphide substrate | DIRECTV GROUP INC (US) | 2010-06-02 | — | — | EP | claimed |
| US-6696710-B2 | Heterojunction bipolar transistor (HBT) having an improved emitter-base junction | AGILENT TECHNOLOGIES, INC. | 2004-02-24 | — | — | US | claimed |
| US-20020117657-A1 | Heterojunction bipolar transistor (HBT) having an improved emitter-base junction | KEYSIGHT TECHNOLOGIES, INC. | 2002-08-29 | — | — | US | claimed |
| EP-1235278-A2 | Heterojunction bipolar transistor (HBT) having an improved emitter-base junction | Agilent Technologies, Inc. (a Delaware corporation) (US) | 2002-08-28 | — | — | EP | claimed |
| EP-1209750-A2 | Npn-heterojunction bipolar transistor including an antimonide base formed on semi-insulating indium phosphide substrate | Hughes Electronics Corporation (US) | 2002-05-29 | — | — | EP | claimed |
| EP-0503731-B1 | Method of making a transistor with high electron mobility | PHILIPS ELECTRONIQUE LAB (FR) | 1998-12-02 | — | — | EP | claimed |
| EP-0549201-B1 | Photocathode for image intensifier tube | LITTON SYSTEMS INC (US) | 1996-03-20 | — | — | EP | claimed |
| US-5376185-A | Comprising indium phosphide and quaternary III-V semiconductor alloy layers, antireflection coating | MIDWEST RESEARCH INSTITUTE (US) | 1994-12-27 | — | — | US | claimed |
| US-5349201-A | NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate | HUGHES AIRCRAFT COMPANY (US) | 1994-09-20 | — | — | US | claimed |
| US-5268570-A | Transmission mode InGaAs photocathode for night vision system | LITTON SYSTEMS, INC. (US) | 1993-12-07 | — | — | US | claimed |
| EP-0571994-A2 | NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate | Hughes Aircraft Company (US) | 1993-12-01 | — | — | EP | claimed |
| EP-0549201-A1 | Photocathode for image intensifier tube | LITTON SYSTEMS, INC. (US) | 1993-06-30 | — | — | EP | claimed |
| EP-0279497-B1 | CIRCUIT WITH CONDUCTING LINES FOR THE TRANSFER OF FAST SIGNALS | LABORATOIRES D'ELECTRONIQUE PHILIPS (FR) | 1993-05-26 | — | — | EP | claimed |
| EP-0111758-B1 | LIQUID PHASE EPITAXIAL GROWTH METHOD | FUJITSU LIMITED (JP) | 1987-04-08 | — | — | EP | claimed |
| US-4592791-A | Indium phosphide substrate; growing an aluminum, indium arsenic intermetallic by liquid phase epitaxy | FUJITSU LIMITED (JP) | 1986-06-03 | — | — | US | claimed |
| EP-0111758-A1 | Liquid phase epitaxial growth method | FUJITSU LIMITED (JP) | 1984-06-27 | — | — | EP | claimed |
| US-20230343787-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO LTD (KR) | 2023-10-26 | — | — | US | disclosed |
| US-11728345-B2 | Multi-gate metal-oxide-semiconductor field effect transistor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-08-15 | — | — | US | disclosed |
| US-4592791-A | Indium phosphide substrate; growing an aluminum, indium arsenic intermetallic by liquid phase epitaxy | FUJITSU LIMITED (JP) | 1986-06-03 | — | — | US | disclosed |
| EP-0111758-A1 | Liquid phase epitaxial growth method | FUJITSU LIMITED (JP) | 1984-06-27 | — | — | EP | disclosed |