⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5435835 | 0.89 | — | — | |
| SCHEMBL5451135 | 0.87 | — | — | |
| SCHEMBL2877684 | 0.87 | — | — | |
| SCHEMBL6311060 | 0.82 | — | — | |
| SCHEMBL339303 | 0.75 | — | — | |
| SCHEMBL2349953 | 0.75 | — | — | |
| SCHEMBL705240 | 0.75 | — | — | |
| SCHEMBL2350533 | 0.75 | — | — | |
| SCHEMBL2346595 | 0.75 | — | — | |
| SCHEMBL5440011 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11973315-B2 | VCSEL with integrated electrodes | APPLE INC. (US) | 2024-04-30 | — | — | US | claimed |
| US-20220224078-A1 | VCSEL with integrated electrodes | APPLE INC. | 2022-07-14 | — | — | US | claimed |
| US-11322910-B2 | Indium-phosphide VCSEL with dielectric DBR | APPLE INC. (US) | 2022-05-03 | — | — | US | claimed |
| EP-3888138-A1 | INDIUM-PHOSPHIDE VCSEL WITH DIELECTRIC DBR | Apple Inc. (US) | 2021-10-06 | — | — | EP | claimed |
| US-10833481-B2 | Laser device with a stepped graded index separate confinement heterostructure | INTEL CORPORATION (US) | 2020-11-10 | — | — | US | claimed |
| US-20200274328-A1 | Indium-phosphide VCSEL with dielectric DBR | APPLE INC. | 2020-08-27 | — | — | US | claimed |
| US-20190140426-A1 | LASER DEVICE WITH A STEPPED GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE | INTEL CORPORATION | 2019-05-09 | — | — | US | claimed |
| US-20110062495-A1 | Field Effect Transistor with Access Region Recharge | POWER INTEGRATIONS, INC. | 2011-03-17 | — | — | US | claimed |
| EP-0279497-B1 | CIRCUIT WITH CONDUCTING LINES FOR THE TRANSFER OF FAST SIGNALS | LABORATOIRES D'ELECTRONIQUE PHILIPS (FR) | 1993-05-26 | — | — | EP | claimed |
| EP-0111758-B1 | LIQUID PHASE EPITAXIAL GROWTH METHOD | FUJITSU LIMITED (JP) | 1987-04-08 | — | — | EP | claimed |
| US-4592791-A | Indium phosphide substrate; growing an aluminum, indium arsenic intermetallic by liquid phase epitaxy | FUJITSU LIMITED (JP) | 1986-06-03 | — | — | US | claimed |
| US-20240154390-A1 | SEMICONDUCTOR OPTICAL ELEMENT | MITSUBISHI ELECTRIC CORPORATION (JP) | 2024-05-09 | — | — | US | disclosed |
| US-11973315-B2 | VCSEL with integrated electrodes | APPLE INC. (US) | 2024-04-30 | — | — | US | disclosed |
| US-20220224078-A1 | VCSEL with integrated electrodes | APPLE INC. | 2022-07-14 | — | — | US | disclosed |
| US-11322910-B2 | Indium-phosphide VCSEL with dielectric DBR | APPLE INC. (US) | 2022-05-03 | — | — | US | disclosed |
| US-20040119129-A1 | Unipolar photodiode having a schottky junction contact | KEYSIGHT TECHNOLOGIES, INC. | 2004-06-24 | — | — | US | disclosed |
| US-6740908-B1 | Extended drift heterostructure photodiode having enhanced electron response | AGILENT TECHNOLOGIES, INC. | 2004-05-25 | — | — | US | disclosed |
| EP-0111758-B1 | LIQUID PHASE EPITAXIAL GROWTH METHOD | FUJITSU LIMITED (JP) | 1987-04-08 | — | — | EP | disclosed |
| US-4592791-A | Indium phosphide substrate; growing an aluminum, indium arsenic intermetallic by liquid phase epitaxy | FUJITSU LIMITED (JP) | 1986-06-03 | — | — | US | disclosed |
| EP-0111758-A1 | Liquid phase epitaxial growth method | FUJITSU LIMITED (JP) | 1984-06-27 | — | — | EP | disclosed |