2-Ethylhexanoic Acid

2-Ethylhexanoic Acid

SCHEMBL2909208

CCCCC(CC)C(=O)[O-].N.[Au+]

nearest known ligand 0.88

Full drug profile on Sugi Atlas →

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
▸ CA2 P00918 10/20 0.88
▸ MAPK1 P28482 2/20 0.59
▸ CA1 P00915 7/20 0.57
▸ CYP3A4 P08684 2/20 0.54
▸ TSHR P16473 2/20 0.54
▸ NFKB1 P19838 2/20 0.54
▸ NPSR1 Q6W5P4 2/20 0.54
▸ SLC1A3 P43003 1/20 0.41
▸ SLC1A2 P43004 1/20 0.41
▸ SLC1A1 P43005 1/20 0.41
▸ USP2 O75604 1/20 0.40
▸ CA7 P43166 1/20 0.40
▸ CA14 Q9ULX7 1/20 0.40
▸ MEN1 O00255 1/20 0.38
▸ ALDH1A1 P00352 1/20 0.38
▸ MAPT P10636 1/20 0.38
▸ KMT2A Q03164 1/20 0.38
▸ SMN1; SMN2 Q16637 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
2-Ethylhexanoic Acid SCHEMBL2787775 0.98 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL8853560 0.96 CA2 (0.88) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL4337314 0.93 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL12501069 0.93 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL11415998 0.93 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL23802667 0.93 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL2787776 0.93 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL21569275 0.93 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL20582677 0.93 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL887054 0.93 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1825714-B1 HEAT ENHANCEMENT IN CRITICAL VIEWING AREA OF TRANSPARENT PLASTIC PANEL EXATEC LLC (US) 2010-08-11 — — EP claimed
EP-1886537-A1 HIGH CONDUCTIVITY DEFROSTER USING A HIGH POWER TREATMENT Exatec, LLC. (US) 2008-02-13 — — EP claimed
EP-1825714-A1 HEAT ENHANCEMENT IN CRITICAL VIEWING AREA OF TRANSPARENT PLASTIC PANEL Exatec, LLC. (US) 2007-08-29 — — EP claimed
US-20060292938-A1 High conductivity defroster using a high power treatement EXATEC, LLC 2006-12-28 — — US claimed
WO-2006091955-A1 HIGH CONDUCTIVITY DEFROSTER USING A HIGH POWER TREATMENT EXATEC, LLC (US) 2006-08-31 — — WO claimed
US-20060157462-A1 Heat enhancement in critical viewing area of transparent plastic panel EXATEC, LLC 2006-07-20 — — US claimed
WO-2006063064-A1 HEAT ENHANCEMENT IN CRITICAL VIEWING AREA OF TRANSPARENT PLASTIC PANEL EXATEC, LLC (US) 2006-06-15 — — WO claimed
US-5882722-A Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds PARTNERSHIPS LIMITED, INC. (US) 1999-03-16 — — US claimed
US-6361912-B1 — — None — — US disclosed
EP-1825714-B1 HEAT ENHANCEMENT IN CRITICAL VIEWING AREA OF TRANSPARENT PLASTIC PANEL EXATEC LLC (US) 2010-08-11 — — EP disclosed
CN-101129093-A High conductivity defroster using a high power treatment EXATEC LLC (US) 2008-02-20 — — CN disclosed
EP-1886537-A1 HIGH CONDUCTIVITY DEFROSTER USING A HIGH POWER TREATMENT Exatec, LLC. (US) 2008-02-13 — — EP disclosed
EP-1825714-A1 HEAT ENHANCEMENT IN CRITICAL VIEWING AREA OF TRANSPARENT PLASTIC PANEL Exatec, LLC. (US) 2007-08-29 — — EP disclosed
EP-0961809-B1 LOW TEMPERATURE METHOD AND COMPOSITIONS FOR PRODUCING ELECTRICAL CONDUCTORS PARTNERSHIPS LTD INC (US) 2007-02-07 — — EP disclosed
WO-2003003381-A1 LOW TEMPERATURE METHOD AND COMPOSITIONS FOR PRODUCING ELECTRICAL CONDUCTORS PARELEC, INC. (US) 2003-01-09 — — WO disclosed
US-6379745-B1 APPLYING CONDUCTOR PATTERN TO SUBSTRATE; HEATING PARELEC, INC. 2002-04-30 — — US disclosed
US-6361912-B2 APPLYING METALLIC TONER ONTO AMORPHOUS SEMICONDUCTOR LAYER WITH SELECTIVE CRYSTALLIZATION VIA LIGHT EXPOSURE, SURFACE CHARGING, JUXTAPOSING, AND APPLYING VOLTAGE TO CAUSE TONER ADHERENCE, THEN ANNEALING THE PENN STATE RESEARCH FOUNDATION 2002-03-26 — — US disclosed
US-20010033985-A1 Applying metallic toner onto amorphous semiconductor layer with selective crystallization via light exposure, surface charging, juxtaposing, and applying voltage to cause toner adherence, then annealing THE PENN STATE RESEARCH FOUNDATION 2001-10-25 — — US disclosed
US-6036889-A EFFICIENTLY CONSOLIDATED TO SOLID METAL AND BONDED FIRMLY TO CIRCUIT BOARD SUBSTRATES AT LOW TEMPERATURE PARELEC, INC. (US) 2000-03-14 — — US disclosed
US-5882722-A Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds PARTNERSHIPS LIMITED, INC. (US) 1999-03-16 — — US disclosed
Send feedback