Zinc Ion

Zinc Ion

SCHEMBL29349673

[In+3].[O-2].[Sn+4].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL33054 1.00
Zinc Ion SCHEMBL33525179 0.89
Zinc Ion SCHEMBL17417201 0.89
Zinc Ion SCHEMBL15842344 0.89
Zinc Ion SCHEMBL17758019 0.89
Zinc Ion SCHEMBL4848794 0.89
SCHEMBL5148460 0.87
SCHEMBL1689500 0.87
SCHEMBL15599 0.87
Zinc Ion SCHEMBL19272482 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 12339 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260150569-A1 DISPLAY DEVICE LG DISPLAY CO., LTD. (KR) 2026-05-28 US claimed
US-20260143674-A1 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-21 US claimed
US-20260143921-A1 DISPLAY PANEL, ELECTRONIC APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING DISPLAY PANEL SAMSUNG DISPLAY CO., LTD. (KR) 2026-05-21 US claimed
CN-122069712-A Semiconductor device and method for manufacturing the same 三星电子株式会社 2026-05-19 CN claimed
EP-4730944-A1 SEMICONDUCTOR DEVICE Samsung Electronics Co., Ltd. (KR) 2026-04-22 EP claimed
US-20260107441-A1 SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-16 US claimed
US-20260107660-A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME SAMSUNG DISPLAY CO., LTD. (KR) 2026-04-16 US claimed
EP-4718973-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF Samsung Electronics Co., Ltd. (KR) 2026-04-01 EP claimed
US-12593474-B2 Semiconductor device including channel structure comprising different compositions SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-31 US claimed
US-20260089949-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-26 US claimed
US-20220130832-A1 SEMICONDUCTOR STRUCTURE WITH VERTICAL GATE TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME NANYA TECHNOLOGY CORPORATION (TW) 2022-04-28 US claimed
US-20220122852-A1 ETCHING METHOD FOR OXIDE SEMICONDUCTOR FILM SONY SEMICONDUCTOR SOLUTIONS CORPORATION (JP) 2022-04-21 US claimed
CN-114365222-A Memory device with dual transistor vertical memory cell and common plate 美光科技公司 2022-04-15 CN claimed
CN-114365221-A Memory device with dual transistor vertical memory cell and common plate 美光科技公司 2022-04-15 CN claimed
CN-111799264-B Three-dimensional groove type ferroelectric memory and preparation method thereof 湘潭大学 2022-04-12 CN claimed
CN-114303241-A Memory device with two-transistor vertical memory cell and shared channel region 美光科技公司 2022-04-08 CN claimed
CN-114303242-A Memory device with two-transistor memory cell and access circuit board 美光科技公司 2022-04-08 CN claimed
US-11296094-B2 Memory device having shared access line for 2-transistor vertical memory cell MICRON TECHNOLOGY, INC. (US) 2022-04-05 US claimed
US-11276726-B2 Imaging element, stacked imaging element, and solid-state imaging apparatus SONY CORPORATION (JP) 2022-03-15 US claimed
US-11251247-B2 Display device and method for fabricating the same SAMSUNG DISPLAY CO., LTD. (KR) 2022-02-15 US claimed