Zinc Ion

Zinc Ion

SCHEMBL17417201

[Al+3].[In+3].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Sn+4].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL867091 0.89
Zinc Ion SCHEMBL29349673 0.89
Zinc Ion SCHEMBL29352325 0.89
Zinc Ion SCHEMBL33054 0.89
Zinc Ion SCHEMBL95145 0.89
Zinc Ion SCHEMBL106278 0.89
Zinc Ion SCHEMBL15842344 0.80
Zinc Ion SCHEMBL4848794 0.80
Zinc Ion SCHEMBL17758019 0.80
Zinc Ion SCHEMBL16970958 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 744 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260143674-A1 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-21 US claimed
CN-122069712-A Semiconductor device and method for manufacturing the same 三星电子株式会社 2026-05-19 CN claimed
EP-4730944-A1 SEMICONDUCTOR DEVICE Samsung Electronics Co., Ltd. (KR) 2026-04-22 EP claimed
US-20260107441-A1 SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-16 US claimed
EP-4718973-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF Samsung Electronics Co., Ltd. (KR) 2026-04-01 EP claimed
US-20260089949-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-26 US claimed
US-20260025973-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20260025968-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20250351338-A1 SEMICONDUCTOR DEVICES SAMSUNG ELECTRONICS CO LTD (KR) 2025-11-13 US claimed
US-20250342865-A1 MEMORY DEVICE HAVING SHARED READ/WRITE DATA LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY INC (US) 2025-11-06 US claimed
US-20200211615-A1 MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200212045-A1 VERTICAL 2-TRANSISTOR MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200212051-A1 MEMORY DEVICE HAVING SHARED ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200211602-A1 MEMORY DEVICE HAVING SHARED READ/WRITE DATA LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200212050-A1 MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL MICRON TECHNOLOGY, INC. 2020-07-02 US claimed
US-20200111917-A1 DEVICES AND ELECTRONIC SYSTEMS INCLUDING VERTICAL TRANSISTORS, AND RELATED METHODS MICRON TECHNOLOGY, INC. 2020-04-09 US claimed
US-20200111919-A1 DEVICES INCLUDING VERTICAL TRANSISTORS, AND RELATED METHODS AND ELECTRONIC SYSTEMS MICRON TECHNOLOGY, INC. 2020-04-09 US claimed
US-9490265-B2 Semiconductor device and method for fabricating the same UNITED MICROELECTRONICS CORP. (TW) 2016-11-08 US claimed
US-20160268311-A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME UNITED MICROELECTRONICS CORP. (TW) 2016-09-15 US claimed
CN-105742797-A ANTENNA DEVICE AND ELECTRONIC DEVICE WITH THE SAME 三星电子株式会社 2016-07-06 CN claimed