⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL997577 | 0.81 | TSHR (0.33) | — | |
| SCHEMBL1262868 | 0.81 | — | — | |
| SCHEMBL28187812 | 0.79 | — | — | |
| SCHEMBL8769729 | 0.78 | CES1 (0.45) | — | |
| SCHEMBL5697594 | 0.78 | HSD17B10 (0.32) | — | |
| SCHEMBL11289016 | 0.78 | — | — | |
| SCHEMBL29219480 | 0.77 | TSHR (0.31) | — | |
| SCHEMBL4751585 | 0.77 | — | — | |
| SCHEMBL5013568 | 0.75 | — | — | |
| SCHEMBL9046098 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122054878-A | Method for manufacturing light-emitting device, negative-type radiation-sensitive composition, cured film, and organic EL device | JSR株式会社 | 2026-05-15 | — | — | CN | disclosed |
| US-20260026281-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION | JSR CORPORATION (JP) | 2026-01-22 | — | — | US | disclosed |
| WO-2025033138-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR METAL-CONTAINING RESIST | JSR株式会社 | 2025-02-13 | — | — | WO | disclosed |
| US-20250044701-A1 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SILICON-CONTAINING COMPOSITION | JSR CORPORATION (JP) | 2025-02-06 | — | — | US | disclosed |
| WO-2025009380-A1 | SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND REVERSAL PATTERN FORMING MATERIAL | JSR株式会社 | 2025-01-09 | — | — | WO | disclosed |
| WO-2024205936-A1 | GAS RELEASING UNDERLAYERS FOR PHOTOPATTERNABLE ORGANOMETALLIC RESIST | INPRIA CORPORATION (US) | 2024-10-03 | — | — | WO | disclosed |
| WO-2024203400-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND UNDERLAYER FILM-FORMING COMPOSITION FOR METAL-CONTAINING RESIST | JSR株式会社 | 2024-10-03 | — | — | WO | disclosed |
| US-20240319599-A1 | GAS RELEASING UNDERLAYERS FOR PHOTOPATTERNABLE ORGANOMETALLIC RESIST | JSR CORPORATION (JP) | 2024-09-26 | — | — | US | disclosed |
| US-12098282-B2 | Film-forming composition, silicon-containing film, and resist pattern-forming method | JSR CORPORATION (JP) | 2024-09-24 | — | — | US | disclosed |
| WO-2024135316-A1 | COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE | JSR株式会社 | 2024-06-27 | — | — | WO | disclosed |
| US-20240004297-A1 | COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | JSR CORPORATION (JP) | 2024-01-04 | — | — | US | disclosed |
| WO-2023204078-A1 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND SILICON-CONTAINING COMPOSITION | JSR株式会社 | 2023-10-26 | — | — | WO | disclosed |
| US-20230213860-A1 | POSITIVE-TYPE PHOTOSENSITIVE RESIN COM+POSITION AND CURED FILM PREPARED THEREFROM | ROHM & HAAS ELECT MATERIALS KOREA LTD (KR) | 2023-07-06 | — | — | US | disclosed |
| CN-113039253-B | Double-liquid mixed adhesive | 株式会社E-TEC | 2023-05-12 | — | — | CN | disclosed |
| CN-109563376-B | Two-liquid mixed adhesive | 株式会社E-TEC | 2022-07-05 | — | — | CN | disclosed |
| US-20220146940-A1 | COMPOSITION, SILICON-CONTAINING FILM, METHOD OF FORMING SILICON-CONTAINING FILM, AND METHOD OF TREATING SEMICONDUCTOR SUBSTRATE | JSR CORPORATION (JP) | 2022-05-12 | — | — | US | disclosed |
| US-11274233-B2 | Two-component adhesive | EMULSION TECHNOLOGY CO., LTD. (JP) | 2022-03-15 | — | — | US | disclosed |
| US-20220025232-A1 | TWO-COMPONENT ADHESIVE | EMULSION TECHNOLOGY CO., LTD. (JP) | 2022-01-27 | — | — | US | disclosed |