⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL5707312 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL8010695 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL4283139 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL27584929 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL1287588 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL720500 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL3112390 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL5078361 | 0.82 | — | — | |
| SCHEMBL6891027 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL4520667 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1719171-B1 | SEMICONDUCTOR STRUCTURE | INFINEON TECHNOLOGIES AG (DE) | 2018-09-12 | — | — | EP | disclosed |
| EP-1719183-B1 | LDMOS TRANSISTOR AND METHOD OF MAKING THE SAME | INFINEON TECHNOLOGIES AG (DE) | 2017-04-26 | — | — | EP | disclosed |
| US-9275851-B2 | Aqueous, nitrogen-free cleaning composition and its use for removing residues and contaminants from semiconductor substrates suitable for manufacturing microelectronic devices | BASF SE (DE) | 2016-03-01 | — | — | US | disclosed |
| CN-101877328-B | Method for producing an electrically conductive connection | INFINEON TECHNOLOGIES AG | 2014-06-11 | — | — | CN | disclosed |
| EP-2688688-A1 | AQUEOUS, NITROGEN-FREE CLEANING COMPOSITION, PREPARATION AND USE THEREOF | BASF SE (DE) | 2014-01-29 | — | — | EP | disclosed |
| WO-2012127336-A1 | AQUEOUS, NITROGEN-FREE CLEANING COMPOSITION, PREPARATION AND USE THEREOF | BASF SE (DE) | 2012-09-27 | — | — | WO | disclosed |
| US-8227340-B2 | Method for producing a copper connection between two sides of a substrate | INFINEON TECHNOLOGIES AG (DE) | 2012-07-24 | — | — | US | disclosed |
| CN-1947262-B | LDMOS transistor and manufacture method thereof | INFINEON TECHNOLOGIES AG | 2011-11-16 | — | — | CN | disclosed |
| US-20100279503-A1 | Method for Producing an Electrically Conductive Connection | INFINEON TECHNOLOGIES AG (DE) | 2010-11-04 | — | — | US | disclosed |
| CN-101877328-A | Be used to make the method that conduction connects | INFINEON TECHNOLOGIES AG | 2010-11-03 | — | — | CN | disclosed |
| CN-1947245-A | Semiconductor structure | INFINEON TECHNOLOGIES AG (DE) | 2007-04-11 | — | — | CN | disclosed |
| US-20070020863-A1 | LDMOS Transistor | MA GORDON | 2007-01-25 | — | — | US | disclosed |
| US-20070007616-A1 | Semiconductor structure | MA GORDON | 2007-01-11 | — | — | US | disclosed |
| EP-1719171-A1 | SEMICONDUCTOR STRUCTURE | Infineon Technologies AG (DE) | 2006-11-08 | — | — | EP | disclosed |
| US-7119399-B2 | LDMOS transistor | INFINEON TECHNOLOGIES AG (DE) | 2006-10-10 | — | — | US | disclosed |
| WO-2005086231-A1 | SEMICONDUCTOR STRUCTURE | INFINEON TECHNOLOGIES AG (DE) | 2005-09-15 | — | — | WO | disclosed |
| US-20050189588-A1 | Semiconductor structure | INFINEON TECHNOLOGIES AG (DE) | 2005-09-01 | — | — | US | disclosed |
| US-20050189587-A1 | LDMOS transistor | INFINEON TECHNOLOGIES AG (DE) | 2005-09-01 | — | — | US | disclosed |
| US-6905959-B1 | Apparatus and method for depositing superior Ta (N) copper thin films for barrier and seed applications in semiconductor processing | NOVELLUS SYSTEMS, INC. (US) | 2005-06-14 | — | — | US | disclosed |
| US-6541371-B1 | Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processing | NOVELLUS SYSTEMS, INC. | 2003-04-01 | — | — | US | disclosed |