⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL4283139 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL7196231 | 0.87 | — | — | |
| SCHEMBL27629367 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL2938012 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL8010695 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL1287588 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL5707312 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL27584929 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL38663728 | 0.75 | — | — | |
| SCHEMBL6891027 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-103890943-B | Memristive element based on heterojunction oxide | 慧与发展有限责任合伙企业 | 2016-09-28 | — | — | CN | disclosed |
| EP-2769413-B1 | MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE | HEWLETT PACKARD DEVELOPMENT CO (US) | 2016-04-27 | — | — | EP | disclosed |
| US-9224949-B2 | Memristive elements that exhibit minimal sneak path current | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP (US) | 2015-12-29 | — | — | US | disclosed |
| US-9082533-B2 | Memristive element based on hetero-junction oxide | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2015-07-14 | — | — | US | disclosed |
| US-8882217-B2 | Printhead assembly including memory elements | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2014-11-11 | — | — | US | disclosed |
| US-20140311790-A1 | MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP | 2014-10-23 | — | — | US | disclosed |
| EP-2769413-A1 | MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE | Hewlett-Packard Development Company, L.P. (US) | 2014-08-27 | — | — | EP | disclosed |
| CN-103890943-A | Memristive element based on heterojunction oxide | HEWLETT PACKARD DEVELOPMENT CO | 2014-06-25 | — | — | CN | disclosed |
| US-20130334485-A1 | MEMRISTIVE ELEMENTS THAT EXHIBIT MINIMAL SNEAK PATH CURRENT | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2013-12-19 | — | — | US | disclosed |
| US-20130106930-A1 | PRINTHEAD ASSEMBLY INCLUDING MEMORY ELEMENTS | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. | 2013-05-02 | — | — | US | disclosed |
| WO-2013058760-A1 | MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE | HEWLETT-PACKARD DEVELOPMENT COMPANY (US) | 2013-04-25 | — | — | WO | disclosed |
| WO-2012118481-A1 | MEMRISTIVE ELEMENTS THAT EXHIBIT MINIMAL SNEAK PATH CURRENT | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2012-09-07 | — | — | WO | disclosed |
| US-8259485-B2 | Multilayer structures having memory elements with varied resistance of switching layers | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2012-09-04 | — | — | US | disclosed |
| US-20120074378-A1 | MEMORY ELEMENT HAVING ELASTICALLY DEFORMABLE ACTIVE REGION | HEWLETT PACKARD DEVELOPMENT COMPANY, L.P. | 2012-03-29 | — | — | US | disclosed |
| US-20120051125-A1 | MULTILAYER STRUCTURES HAVING MEMORY ELEMENTS WITH VARIED RESISTANCE OF SWITCHING LAYERS | HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP | 2012-03-01 | — | — | US | disclosed |