Benzoic Acid

Benzoic Acid

SCHEMBL29503099

CCCCCCC(=NO)C(=O)c1ccc(Sc2ccccc2)cc1.O=C(O)c1ccccc1

nearest known ligand 0.50

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Known targets — ChEMBL curated mechanism

CACNA1CCACNA1DCACNA1FCACNA1SDPP4HTR1BHTR1D

The experimentally established mechanism targets of Benzoic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
▸ CES2 O00748 5/20 0.50
▸ CES1 P23141 5/20 0.50
▸ ALDH1A1 P00352 2/20 0.41
▸ HPGD P15428 1/20 0.41
▸ TP53 P04637 1/20 0.40
▸ TSHR P16473 1/20 0.40
▸ RARB P10826 5/20 0.39
▸ PLA2G4B P0C869 1/20 0.39
▸ MEN1 O00255 1/20 0.39
▸ RARA P10276 1/20 0.39
▸ MAPT P10636 1/20 0.39
▸ MTOR P42345 1/20 0.39
▸ KMT2A Q03164 1/20 0.39
▸ HTT P42858 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29249663 0.95 CES2 (0.51) CES2CES1ALDH1A1HPGDHTT
SCHEMBL13808811 0.95 CES2 (0.51) CES2CES1ALDH1A1HPGDHTT
SCHEMBL27657632 0.86 CES2 (0.66) CES2CES1MEN1MAPTKMT2A
SCHEMBL28180756 0.86 CES2 (0.66) CES2CES1MEN1MAPTKMT2A
SCHEMBL17936731 0.85 CES2 (0.51) CES2CES1ALDH1A1HPGD
SCHEMBL22550043 0.85 HTT (0.47) CES2CES1ALDH1A1HPGDHTT
SCHEMBL14389493 0.83 CES2 (0.49) CES2CES1ALDH1A1HPGD
SCHEMBL12021972 0.81 CES2 (0.48) CES2CES1ALDH1A1HPGDMAPT
SCHEMBL92006 0.81 CES2 (0.48) CES2CES1ALDH1A1HPGDMAPT
SCHEMBL22729193 0.81 CES2 (0.48) CES2CES1ALDH1A1HPGDMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119126490-A Preparation method and application of low-residual-stress high-refractive-index negative OC photoresist and photo-curing pattern 西安思摩威新材料有限公司 2024-12-13 — — CN disclosed
CN-114326299-A Photosensitive resin composition, optical filter and application 常州强力电子新材料股份有限公司 2022-04-12 — — CN disclosed
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