SCHEMBL2950445

SCHEMBL2950445

CCC[Si](CCC)(OCC(C)C)OCC(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5834440 0.90
SCHEMBL2960798 0.85
SCHEMBL2957656 0.81 ALDH1A1 (0.31)
SCHEMBL430953 0.79
SCHEMBL656715 0.78 ALDH1A1 (0.32)
SCHEMBL23093204 0.77
SCHEMBL29655589 0.77
SCHEMBL5834007 0.77
SCHEMBL8470273 0.75 ALDH1A1 (0.32)
SCHEMBL27391119 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112955514-B Composition for forming coating film, glass substrate coated with the composition, and touch panel using the glass substrate 阪田油墨株式会社 2022-09-06 CN disclosed
CN-114430767-A Composition for forming coating, laminate coated with the composition, touch panel using the laminate, and method for forming cured coating 阪田油墨株式会社 2022-05-03 CN disclosed
CN-112955514-A Composition for forming coating film, glass substrate coated with the composition, and touch panel using the glass substrate 阪田油墨株式会社 2021-06-11 CN disclosed
WO-2021065211-A1 COATING FILM-FORMING COMPOSITION, LAMINATE OBTAINED BY COATING SAID COATING FILM-FORMING COMPOSITION, TOUCH PANEL OBTAINED BY USING SAID LAMINATE, AND METHOD FOR FORMING CURED COATING FILM サカタインクス株式会社 2021-04-08 WO disclosed
CN-107367784-B Optical phase difference member and projector JXTG能源株式会社 2020-11-24 CN disclosed
CN-108139525-B Optical phase difference member and projector JXTG能源株式会社 2020-06-26 CN disclosed
US-10408984-B2 Optical phase difference component, composite optical component, incorporating optical phase difference component, and method for manufacturing optical phase difference component JX NIPPON OIL AND ENERGY CORPORATION (JP) 2019-09-10 US disclosed
US-9823392-B2 Optical substrate, mold to be used in optical substrate manufacture, and light emitting element including optical substrate JX NIPPON OIL & ENERGY CORPORATION (JP) 2017-11-21 US disclosed
US-20170199313-A1 OPTICAL PHASE DIFFERENCE COMPONENT, COMPOSITE OPTICAL COMPONENT, INCORPORATING OPTICAL PHASE DIFFERENCE COMPONENT, AND METHOD FOR MANUFACTURING OPTICAL PHASE DIFFERENCE COMPONENT JX NIPPON OIL & ENERGY CORPORATION (JP) 2017-07-13 US disclosed
EP-3178632-A1 METHOD FOR MANUFACTURING MEMBER HAVING IRREGULAR PATTERN JX Nippon Oil & Energy Corporation (JP) 2017-06-14 EP disclosed
US-20150060840-A1 ORGANIC EL ELEMENT AND METHOD FOR MANUFACTURING SAME JX NIPPON OIL & ENERGY CORPORATION (JP) 2015-03-05 US disclosed
US-20100283133-A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE HAMADA YOSHITAKA 2010-11-11 US disclosed
US-20100233482-A1 Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device HAMADA YOSHITAKA 2010-09-16 US disclosed
US-7786022-B2 Method for forming insulating film with low dielectric constant SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-31 US disclosed
US-20100210765-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-08-19 US disclosed
US-7754330-B2 Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-13 US disclosed
US-20090294726-A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20090294922-A1 ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE PANASONIC CORPORATION (JP) 2009-12-03 US disclosed
US-20080290521-A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed
US-20080292863-A1 SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed