⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5833996 | 0.87 | — | — | |
| SCHEMBL2947523 | 0.78 | — | — | |
| SCHEMBL2399341 | 0.78 | — | — | |
| SCHEMBL9159658 | 0.72 | — | — | |
| SCHEMBL5833227 | 0.69 | — | — | |
| SCHEMBL23149 | 0.67 | — | — | |
| SCHEMBL429653 | 0.67 | — | — | |
| SCHEMBL16705794 | 0.65 | TSHR (0.33) | — | |
| SCHEMBL25262297 | 0.65 | — | — | |
| SCHEMBL2947516 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117069942-A | Polysiloxane compound, composition for forming film, laminate, touch panel, and method for forming cured film | 阪田油墨株式会社 | 2023-11-17 | — | — | CN | disclosed |
| CN-117075425-A | Polysiloxane composition, composition for forming film, laminate, touch panel, and method for forming cured film | 阪田油墨株式会社 | 2023-11-17 | — | — | CN | disclosed |
| CN-114430767-B | Composition for forming film, laminate coated with the composition, touch panel using the laminate, and method for forming cured film | 阪田油墨株式会社 | 2023-04-28 | — | — | CN | disclosed |
| CN-115145113-A | Composition for forming coating, laminate coated with same, fingerprint authentication sensor using laminate, and method for forming cured coating | 阪田油墨株式会社 | 2022-10-04 | — | — | CN | disclosed |
| CN-112955514-B | Composition for forming coating film, glass substrate coated with the composition, and touch panel using the glass substrate | 阪田油墨株式会社 | 2022-09-06 | — | — | CN | disclosed |
| CN-114430767-A | Composition for forming coating, laminate coated with the composition, touch panel using the laminate, and method for forming cured coating | 阪田油墨株式会社 | 2022-05-03 | — | — | CN | disclosed |
| CN-112955514-A | Composition for forming coating film, glass substrate coated with the composition, and touch panel using the glass substrate | 阪田油墨株式会社 | 2021-06-11 | — | — | CN | disclosed |
| WO-2021065211-A1 | COATING FILM-FORMING COMPOSITION, LAMINATE OBTAINED BY COATING SAID COATING FILM-FORMING COMPOSITION, TOUCH PANEL OBTAINED BY USING SAID LAMINATE, AND METHOD FOR FORMING CURED COATING FILM | サカタインクス株式会社 | 2021-04-08 | — | — | WO | disclosed |
| US-20100283133-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | HAMADA YOSHITAKA | 2010-11-11 | — | — | US | disclosed |
| US-20100233482-A1 | Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | HAMADA YOSHITAKA | 2010-09-16 | — | — | US | disclosed |
| US-7786022-B2 | Method for forming insulating film with low dielectric constant | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-31 | — | — | US | disclosed |
| US-20100210765-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-08-19 | — | — | US | disclosed |
| US-7754330-B2 | Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-13 | — | — | US | disclosed |
| US-20090294726-A1 | ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20090294922-A1 | ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | PANASONIC CORPORATION (JP) | 2009-12-03 | — | — | US | disclosed |
| EP-1999167-A2 | ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR | Novolen Technology Holdings, C.V. (NL) | 2008-12-10 | — | — | EP | disclosed |
| US-20080290521-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080292863-A1 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| WO-2007106348-A2 | ZIEGLER-NATTA CATALYST WITH IN SITU-GENERATED DONOR | NOVOLEN TECHNOLOGY HOLDINGS C.V. (NL) | 2007-09-20 | — | — | WO | disclosed |
| US-20070213204-A1 | Ziegler-Natta catalyst with in situ-generated donor | NOVOLEN TECHNOLOGY HOLDINGS C.V. | 2007-09-13 | — | — | US | disclosed |