⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL409933 | 1.00 | — | — | |
| SCHEMBL31379755 | 0.87 | — | — | |
| SCHEMBL22028739 | 0.87 | — | — | |
| SCHEMBL30138594 | 0.87 | — | — | |
| SCHEMBL30061791 | 0.87 | — | — | |
| SCHEMBL10578288 | 0.82 | — | — | |
| SCHEMBL7544479 | 0.82 | — | — | |
| SCHEMBL6931147 | 0.82 | — | — | |
| SCHEMBL3455590 | 0.82 | — | — | |
| SCHEMBL7548349 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250351466-A1 | OXIDE SEMICONDUCTOR FERROELECTRIC FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | claimed |
| US-20250241015-A1 | OXIDE SEMICONDUCTOR FERROELECTRIC FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-24 | — | — | US | claimed |
| US-12302590-B2 | Ferroelectric MFM capacitor array and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2025-05-13 | — | — | US | claimed |
| CN-119967855-A | Device structure, semiconductor device and forming method thereof | 台湾积体电路制造股份有限公司 | 2025-05-09 | — | — | CN | claimed |
| US-12154938-B2 | Ferroelectric MFM capacitor array and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2024-11-26 | — | — | US | claimed |
| US-12051750-B2 | Memory array gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-30 | — | — | US | claimed |
| US-20230387186-A1 | FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2023-11-30 | — | — | US | claimed |
| US-20220416085-A1 | Memory Array Gate Structures | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-12-29 | — | — | US | claimed |
| US-12575109-B2 | Antiferroelectric non-volatile memory | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-10 | — | — | US | disclosed |
| US-12484232-B2 | Ferroelectric memory device and method of fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-25 | — | — | US | disclosed |
| US-20250351466-A1 | OXIDE SEMICONDUCTOR FERROELECTRIC FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250344397-A1 | FERROELECTRIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250331196-A1 | MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-23 | — | — | US | disclosed |
| US-12382640-B2 | Memory device and method for fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-08-05 | — | — | US | disclosed |
| US-20220416085-A1 | Memory Array Gate Structures | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-12-29 | — | — | US | disclosed |
| US-11527548-B2 | Semiconductor devices and electronic systems including an etch stop material, and related methods | MICRON TECHNOLOGY, INC. (US) | 2022-12-13 | — | — | US | disclosed |
| US-20220392919-A1 | 3D FERROELECTRIC MEMORY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-08 | — | — | US | disclosed |
| US-20220231036-A1 | MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-07-21 | — | — | US | disclosed |
| US-20220139935-A1 | MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-05-05 | — | — | US | disclosed |
| CN-114078860-A | Integrated circuit device and method of forming the same | 台湾积体电路制造股份有限公司 | 2022-02-22 | — | — | CN | disclosed |