⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29564178 | 1.00 | — | — | |
| SCHEMBL31379755 | 0.87 | — | — | |
| SCHEMBL22028739 | 0.87 | — | — | |
| SCHEMBL30138594 | 0.87 | — | — | |
| SCHEMBL30061791 | 0.87 | — | — | |
| SCHEMBL10578288 | 0.82 | — | — | |
| SCHEMBL7544479 | 0.82 | — | — | |
| SCHEMBL6931147 | 0.82 | — | — | |
| SCHEMBL3455590 | 0.82 | — | — | |
| SCHEMBL7548349 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 124 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12484232-B2 | Ferroelectric memory device and method of fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-25 | — | — | US | claimed |
| US-20250351466-A1 | OXIDE SEMICONDUCTOR FERROELECTRIC FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | claimed |
| US-20250241015-A1 | OXIDE SEMICONDUCTOR FERROELECTRIC FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-24 | — | — | US | claimed |
| US-12302590-B2 | Ferroelectric MFM capacitor array and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2025-05-13 | — | — | US | claimed |
| CN-119967855-A | Device structure, semiconductor device and forming method thereof | 台湾积体电路制造股份有限公司 | 2025-05-09 | — | — | CN | claimed |
| US-12154938-B2 | Ferroelectric MFM capacitor array and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2024-11-26 | — | — | US | claimed |
| US-12102019-B2 | Data storage structure for improving memory cell reliability | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-24 | — | — | US | claimed |
| US-12051750-B2 | Memory array gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-30 | — | — | US | claimed |
| US-20230387186-A1 | FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2023-11-30 | — | — | US | claimed |
| US-20230345847-A1 | DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-26 | — | — | US | claimed |
| US-20230276633-A1 | FERROELECTRIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-08-31 | — | — | US | claimed |
| CN-116347894-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-06-27 | — | — | CN | claimed |
| US-20220416085-A1 | Memory Array Gate Structures | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-12-29 | — | — | US | claimed |
| US-20210376055-A1 | FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-12-02 | — | — | US | claimed |
| CN-113299830-A | Ferroelectric metal-ferroelectric metal capacitor formed on semiconductor die and method | 台湾积体电路制造股份有限公司 | 2021-08-24 | — | — | CN | claimed |
| CN-102472721-B | Ion-sensitive sensor having multilayer construction in the sensitive region | CONDUCTA ENDRESS & HAUSER | 2015-01-28 | — | — | CN | claimed |
| US-8461587-B2 | Ion-sensitive sensor with multilayer construction in the sensitive region | Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG (DE) | 2013-06-11 | — | — | US | claimed |
| CN-102472721-A | Ion sensitive sensor with multilayer structure in sensor area | CONDUCTA ENDRESS & HAUSER | 2012-05-23 | — | — | CN | claimed |
| US-20120018722-A1 | ION-SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSITIVE REGION | ENDRESS + HAUSER CONDUCTA GESELLSCHAFT FUR MESS- UND REGELTECHNIK MBH + CO. KG (DE) | 2012-01-26 | — | — | US | claimed |
| US-12575109-B2 | Antiferroelectric non-volatile memory | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-10 | — | — | US | disclosed |
| US-20250364482-A1 | Memory Device and Method of Forming The Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250365967-A1 | FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-27 | — | — | US | disclosed |
| US-12484232-B2 | Ferroelectric memory device and method of fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-25 | — | — | US | disclosed |
| US-20250351466-A1 | OXIDE SEMICONDUCTOR FERROELECTRIC FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250344397-A1 | FERROELECTRIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250331196-A1 | MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-23 | — | — | US | disclosed |
| US-20250318144-A1 | BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-09 | — | — | US | disclosed |
| US-20250318143-A1 | Ferroelectric Memory Device and Method of Manufacturing the Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-09 | — | — | US | disclosed |
| US-12382640-B2 | Memory device and method for fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-08-05 | — | — | US | disclosed |
| US-20250248046-A1 | SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-31 | — | — | US | disclosed |
| US-20250241015-A1 | OXIDE SEMICONDUCTOR FERROELECTRIC FIELD EFFECT TRANSISTOR | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-24 | — | — | US | disclosed |
| US-12369329-B2 | Bottom-electrode interface structure for memory | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-22 | — | — | US | disclosed |
| US-20250212417-A1 | SEMICONDUCTOR STRUCTURE INCLUDING CRACK DETECTOR AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2025-06-26 | — | — | US | disclosed |
| US-20250159888-A1 | NOVEL 3D RAM SL/BL CONTACT MODULATION | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-05-15 | — | — | US | disclosed |
| US-12302590-B2 | Ferroelectric MFM capacitor array and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2025-05-13 | — | — | US | disclosed |
| CN-119967855-A | Device structure, semiconductor device and forming method thereof | 台湾积体电路制造股份有限公司 | 2025-05-09 | — | — | CN | disclosed |
| US-12289893-B2 | Semiconductor devices including FTJ structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-04-29 | — | — | US | disclosed |
| CN-222776514-U | Three-dimensional memory array and field effect transistor device | 台湾积体电路制造股份有限公司 | 2025-04-18 | — | — | CN | disclosed |
| CN-112436087-B | Memory cell, memory device, and method for forming memory device | 台湾积体电路制造股份有限公司 | 2025-03-14 | — | — | CN | disclosed |
| US-20250089264-A1 | 3D FERROELECTRIC MEMORY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-13 | — | — | US | disclosed |
| US-12232322-B2 | 3D RAM SL/BL contact modulation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-02-18 | — | — | US | disclosed |
| US-12200943-B2 | Memory device structure and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-01-14 | — | — | US | disclosed |
| US-12193240-B2 | 3D ferroelectric memory | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-01-07 | — | — | US | disclosed |
| CN-113380820-B | Memory cell, semiconductor device and forming method thereof | 台湾积体电路制造股份有限公司 | 2024-12-24 | — | — | CN | disclosed |
| US-20240397725-A1 | ANTI-FERROELECTRIC MEMORY DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (TW) | 2024-11-28 | — | — | US | disclosed |
| US-12154938-B2 | Ferroelectric MFM capacitor array and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2024-11-26 | — | — | US | disclosed |
| US-20240389349-A1 | MEMORY DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240381664-A1 | Ferroelectric Memory Device and Method of Manufacturing the Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240381653-A1 | MEMORY DEVICE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-14 | — | — | US | disclosed |
| US-12137572-B2 | Ferroelectric memory device and method of manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-05 | — | — | US | disclosed |
| US-12133390-B2 | Memory array | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-29 | — | — | US | disclosed |
| US-12102019-B2 | Data storage structure for improving memory cell reliability | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-24 | — | — | US | disclosed |
| US-20240315033-A1 | 3D MEMORY WITH GRAPHITE CONDUCTIVE STRIPS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-19 | — | — | US | disclosed |
| CN-111312714-B | Microelectronic devices and electronic systems including etch stop materials and related methods | 美光科技公司 | 2024-08-20 | — | — | CN | disclosed |
| CN-113488484-B | Three-dimensional memory device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2024-08-13 | — | — | CN | disclosed |
| US-12051750-B2 | Memory array gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-30 | — | — | US | disclosed |
| US-12041776-B2 | 3D memory with graphite conductive strips | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-16 | — | — | US | disclosed |
| CN-220935482-U | Nonvolatile memory cell structure and antiferroelectric memory array structure | 台湾积体电路制造股份有限公司 | 2024-05-10 | — | — | CN | disclosed |
| US-20240107776-A1 | ANTIFERROELECTRIC NON-VOLATILE MEMORY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-03-28 | — | — | US | disclosed |
| US-20240074204-A1 | THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-29 | — | — | US | disclosed |
| US-20240064984-A1 | NOVEL 3D RAM SL/BL CONTACT MODULATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-02-22 | — | — | US | disclosed |
| US-20240006304-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-01-04 | — | — | US | disclosed |
| US-11849587-B2 | Three-dimensional memory device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-19 | — | — | US | disclosed |
| US-11839080-B2 | 3D memory with graphite conductive strips | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-05 | — | — | US | disclosed |
| US-20230389324-A1 | FERROELECTRIC-BASED MEMORY DEVICE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230387186-A1 | FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230371257-A1 | 3D MEMORY WITH GRAPHITE CONDUCTIVE STRIPS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| US-20230371273-A1 | SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| US-20230363178-A1 | BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-09 | — | — | US | disclosed |
| US-11805652-B2 | 3D RAM SL/BL contact modulation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-31 | — | — | US | disclosed |
| US-20230345847-A1 | DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-26 | — | — | US | disclosed |
| US-11792996-B2 | Bottom-electrode interface structure for memory | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-10-17 | — | — | US | disclosed |
| US-20230299042-A1 | Memory Device and Method of Forming The Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-09-21 | — | — | US | disclosed |
| US-20230292526-A1 | Memory Device Structure and Manufacturing Method Thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD (TW) | 2023-09-14 | — | — | US | disclosed |
| US-20230276633-A1 | FERROELECTRIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-08-31 | — | — | US | disclosed |
| CN-116583113-A | Integrated circuit device and method of forming the same | 台湾积体电路制造股份有限公司 | 2023-08-11 | — | — | CN | disclosed |
| US-11716913-B2 | Data storage structure for improving memory cell reliability | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-08-01 | — | — | US | disclosed |
| US-11706928-B2 | Memory device and method for fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-07-18 | — | — | US | disclosed |
| US-11695073-B2 | Memory array gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-07-04 | — | — | US | disclosed |
| US-20230209835-A1 | MEMORY ARRAY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-06-29 | — | — | US | disclosed |
| CN-116347894-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2023-06-27 | — | — | CN | disclosed |
| US-11672126-B2 | Three-dimensional memory device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-06-06 | — | — | US | disclosed |
| US-11637126-B2 | Memory device and method of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-04-25 | — | — | US | disclosed |
| US-20230122757-A1 | NOVEL 3D RAM SL/BL CONTACT MODULATION | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-04-20 | — | — | US | disclosed |
| US-11574929-B2 | 3D ferroelectric memory | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-02-07 | — | — | US | disclosed |
| US-11569264-B2 | 3D RAM SL/BL contact modulation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-01-31 | — | — | US | disclosed |
| US-20220415923-A1 | THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-29 | — | — | US | disclosed |
| US-20220416085-A1 | Memory Array Gate Structures | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-12-29 | — | — | US | disclosed |
| US-11527548-B2 | Semiconductor devices and electronic systems including an etch stop material, and related methods | MICRON TECHNOLOGY, INC. (US) | 2022-12-13 | — | — | US | disclosed |
| US-20220392919-A1 | 3D FERROELECTRIC MEMORY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-08 | — | — | US | disclosed |
| US-20220328508-A1 | BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-10-13 | — | — | US | disclosed |
| US-20220278115-A1 | Ferroelectric Memory Device and Method of Manufacturing the Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-09-01 | — | — | US | disclosed |
| CN-114883362-A | Integrated circuit chip and forming method thereof | 台湾积体电路制造股份有限公司 | 2022-08-09 | — | — | CN | disclosed |
| US-20220238802-A1 | DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-07-28 | — | — | US | disclosed |
| US-20220231036-A1 | MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-07-21 | — | — | US | disclosed |
| US-20220139935-A1 | MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-05-05 | — | — | US | disclosed |
| US-11309491-B2 | Data storage structure for improving memory cell reliability | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-04-19 | — | — | US | disclosed |
| CN-114078860-A | Integrated circuit device and method of forming the same | 台湾积体电路制造股份有限公司 | 2022-02-22 | — | — | CN | disclosed |
| US-20210399014-A1 | THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-23 | — | — | US | disclosed |
| US-20210375937-A1 | MEMORY DEVICE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210375932-A1 | 3D FERROELECTRIC MEMORY | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210376153-A1 | Memory Array Gate Structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210375919-A1 | NOVEL 3D RAM SL/BL CONTACT MODULATION | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210376055-A1 | FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210375917-A1 | 3D MEMORY WITH GRAPHITE CONDUCTIVE STRIPS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-02 | — | — | US | disclosed |
| CN-113517300-A | Memory device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-10-19 | — | — | CN | disclosed |
| CN-113488484-A | Three-dimensional memory device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-10-08 | — | — | CN | disclosed |
| CN-113380820-A | Memory cell, semiconductor device and forming method thereof | 台湾积体电路制造股份有限公司 | 2021-09-10 | — | — | CN | disclosed |
| CN-113299830-A | Ferroelectric metal-ferroelectric metal capacitor formed on semiconductor die and method | 台湾积体电路制造股份有限公司 | 2021-08-24 | — | — | CN | disclosed |
| CN-113299655-A | Memory device and forming method thereof | 台湾积体电路制造股份有限公司 | 2021-08-24 | — | — | CN | disclosed |
| US-20210066587-A1 | DATA STORAGE STRUCTURE FOR IMPROVING MEMORY CELL RELIABILITY | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-03-04 | — | — | US | disclosed |
| CN-112436087-A | Memory cell, memory device and method for forming memory device | 台湾积体电路制造股份有限公司 | 2021-03-02 | — | — | CN | disclosed |
| US-20200185406-A1 | SEMICONDUCTOR DEVICES AND ELECTRONIC SYSTEMS INCLUDING AN ETCH STOP MATERIAL, AND RELATED METHODS | MICRON TECHNOLOGY, INC. | 2020-06-11 | — | — | US | disclosed |
| CN-102472721-B | Ion-sensitive sensor having multilayer construction in the sensitive region | CONDUCTA ENDRESS & HAUSER | 2015-01-28 | — | — | CN | disclosed |
| US-8461587-B2 | Ion-sensitive sensor with multilayer construction in the sensitive region | Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG (DE) | 2013-06-11 | — | — | US | disclosed |
| EP-2191034-B1 | METHODS OF PREPARING THIN FILMS BY ATOMIC LAYER DEPOSITION USING MONOCYCLOPENTADIENYL TRIAMINO ZIRCONIUM PRECURSORS | SIGMA ALDRICH CO LLC (US) | 2013-03-13 | — | — | EP | disclosed |
| CN-101815807-B | Method for preparing thin films by atomic layer deposition using monocyclopentadienyl trialkoxy hafnium and zirconium precursors | SIGMA ALDRICH CO | 2012-06-13 | — | — | CN | disclosed |
| CN-102472721-A | Ion sensitive sensor with multilayer structure in sensor area | CONDUCTA ENDRESS & HAUSER | 2012-05-23 | — | — | CN | disclosed |
| US-20120018722-A1 | ION-SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSITIVE REGION | ENDRESS + HAUSER CONDUCTA GESELLSCHAFT FUR MESS- UND REGELTECHNIK MBH + CO. KG (DE) | 2012-01-26 | — | — | US | disclosed |
| US-8039062-B2 | Methods of atomic layer deposition using hafnium and zirconium-based precursors | SIGMA-ALDRICH CO. LLC (US) | 2011-10-18 | — | — | US | disclosed |
| CN-101815807-A | Method for preparing thin films by atomic layer deposition using monocyclopentadienyl trialkoxy hafnium and zirconium precursors | SIGMA ALDRICH CO | 2010-08-25 | — | — | CN | disclosed |
| EP-2191034-A1 | METHODS OF PREPARING THIN FILMS BY ATOMIC LAYER DEPOSITION USING MONOCYCLOPENTADIENYL TRIALKOXY HAFNIUM AND ZIRCONIUM PRECURSORS | Sigma-Aldrich Co. (US) | 2010-06-02 | — | — | EP | disclosed |
| US-20090081385-A1 | METHODS OF ATOMIC LAYER DEPOSITION USING HAFNIUM AND ZIRCONIUM-BASED PRECURSORS | IROBOT CORPORATION | 2009-03-26 | — | — | US | disclosed |
| WO-2009036046-A1 | METHODS OF PREPARING THIN FILMS BY ATOMIC LAYER DEPOSITION USING MONOCYCLOPENTADIENYL TRIALKOXY HAFNIUM AND ZIRCONIUM PRECURSORS | SIGMA-ALDRICH CO. (US) | 2009-03-19 | — | — | WO | disclosed |
| WO-2009036046-A1 | METHODS OF PREPARING THIN FILMS BY ATOMIC LAYER DEPOSITION USING MONOCYCLOPENTADIENYL TRIALKOXY HAFNIUM AND ZIRCONIUM PRECURSORS | SIGMA-ALDRICH CO. (US) | 2009-03-19 | — | — | WO | disclosed |