Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FFAR3 | O14843 | 1/20 | 0.54 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.54 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.54 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.54 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.54 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | AKR1B1 | P15121 | 1/20 | 0.38 |
| ▸ | NAAA | Q02083 | 1/20 | 0.37 |
| ▸ | GPR84 | Q9NQS5 | 7/20 | 0.37 |
| ▸ | PPARG | P37231 | 7/20 | 0.37 |
| ▸ | PPARD | Q03181 | 7/20 | 0.37 |
| ▸ | PPARA | Q07869 | 7/20 | 0.37 |
| ▸ | HDAC11 | Q96DB2 | 5/20 | 0.37 |
| ▸ | TSHR | P16473 | 4/20 | 0.37 |
| ▸ | PTPN1 | P18031 | 3/20 | 0.37 |
| ▸ | TLR2 | O60603 | 2/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.37 |
| ▸ | FABP4 | P15090 | 2/20 | 0.37 |
| ▸ | SLC22A6 | Q4U2R8 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Biphenyl SCHEMBL28685943 | 0.83 | FFAR3 (0.59) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Cyclohexane SCHEMBL458810 | 0.82 | FFAR3 (0.81) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Cyclohexane SCHEMBL3364580 | 0.82 | FFAR3 (0.81) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Butyric Acid SCHEMBL11348636 | 0.82 | — | — | |
| Butyric Acid SCHEMBL3509473 | 0.82 | FFAR3 (0.81) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Cyclohexane SCHEMBL27815810 | 0.82 | FFAR3 (0.81) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Cyclohexane SCHEMBL16341925 | 0.82 | FFAR3 (0.81) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Cyclohexane SCHEMBL7426842 | 0.82 | FFAR3 (0.81) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Butyric Acid SCHEMBL4630509 | 0.81 | FFAR3 (0.56) | FFAR3HDAC3HDAC1HDAC2HDAC8 | |
| Cyclohexane SCHEMBL2800628 | 0.79 | FFAR3 (0.77) | FFAR3HDAC3HDAC1HDAC2HDAC8 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7767559-B2 | Process for fabricating semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2010-08-03 | — | — | US | disclosed |
| US-20090075460-A1 | PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2009-03-19 | — | — | US | disclosed |
| US-7470575-B2 | Process for fabricating semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2008-12-30 | — | — | US | disclosed |
| US-6987036-B2 | Method for forming crystalline semiconductor film and apparatus for forming the same | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2006-01-17 | — | — | US | disclosed |
| US-20050239240-A1 | Process for fabricating semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2005-10-27 | — | — | US | disclosed |
| US-6919237-B2 | Process for fabricating thin film transistors | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2005-07-19 | — | — | US | disclosed |
| US-20040005742-A1 | Process for fabricating semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2004-01-08 | — | — | US | disclosed |
| US-6589824-B2 | Process for fabricating semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2003-07-08 | — | — | US | disclosed |
| US-20030032267-A1 | Method for forming crystalline semiconductor film and apparatus for forming the same | SEMICONDUCTOR ENERGY LABORATOY CO., LTD. (JP) | 2003-02-13 | — | — | US | disclosed |
| US-6417031-B2 | Method of manufacturing a semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2002-07-09 | — | — | US | disclosed |
| US-6232156-B1 | Method of manufacturing a semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2001-05-15 | — | — | US | disclosed |
| US-6184068-B1 | Process for fabricating semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2001-02-06 | — | — | US | disclosed |
| EP-0656644-B1 | Method of manufacturing a crystallized semiconductor layer and semiconductor devices using it | SEMICONDUCTOR ENERGY LAB (JP) | 2000-08-23 | — | — | EP | disclosed |
| EP-0984317-A2 | Active matrix display device and semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2000-03-08 | — | — | EP | disclosed |
| US-5994172-A | Method for producing semiconductor device | SEMICONDUCTOR ENERGY LABORATORY., LTD. (JP) | 1999-11-30 | — | — | US | disclosed |
| US-5904770-A | Method of manufacturing a semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 1999-05-18 | — | — | US | disclosed |
| US-5854096-A | Process for fabricating semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 1998-12-29 | — | — | US | disclosed |
| US-5843833-A | Method for producing semiconductor device | SEMICONDUCTOR ENERGY LABORATROY CO., LTD. (JP) | 1998-12-01 | — | — | US | disclosed |
| US-5585291-A | LOW TEMPERATURE HEAT CRYSTALLIZATION AN AMORPHOUS SILICON SEMICONDUCTOR | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 1996-12-17 | — | — | US | disclosed |
| EP-0656644-A1 | Method of manufacturing a crystallized semiconductor layer and semiconductor devices using it | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 1995-06-07 | — | — | EP | disclosed |