⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1352626 | 1.00 | — | — | |
| SCHEMBL29633678 | 0.87 | — | — | |
| SCHEMBL32679254 | 0.87 | — | — | |
| SCHEMBL1352397 | 0.87 | — | — | |
| SCHEMBL1352907 | 0.87 | — | — | |
| SCHEMBL8971269 | 0.82 | — | — | |
| SCHEMBL161826 | 0.82 | — | — | |
| SCHEMBL8971734 | 0.82 | — | — | |
| SCHEMBL2285707 | 0.82 | — | — | |
| SCHEMBL3934609 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250142924-A1 | SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND RECESSED MULTI-STEP FIELD PLATE WITH FIELD PLATE SPACERS AND METHOD OF FABRICATION | NXP USA, INC. | 2025-05-01 | — | — | US | claimed |
| US-20250142922-A1 | SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR | NXP USA INC (US) | 2025-05-01 | — | — | US | claimed |
| US-20250142923-A1 | SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND RECESSED MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR | NXP USA INC (US) | 2025-05-01 | — | — | US | claimed |
| CN-119947199-A | Semiconductor device having multi-step gate and multi-step field plate and method of manufacturing the same | 恩智浦美国有限公司 | 2025-05-06 | — | — | CN | disclosed |
| CN-119922936-A | Semiconductor device having multi-step gate and multi-step field plate and method of manufacturing the same | 恩智浦美国有限公司 | 2025-05-02 | — | — | CN | disclosed |
| CN-119922937-A | Semiconductor device having multi-step gate and multi-step field plate and method of manufacturing the same | 恩智浦美国有限公司 | 2025-05-02 | — | — | CN | disclosed |
| US-20250142922-A1 | SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR | NXP USA INC (US) | 2025-05-01 | — | — | US | disclosed |
| US-20250142924-A1 | SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND RECESSED MULTI-STEP FIELD PLATE WITH FIELD PLATE SPACERS AND METHOD OF FABRICATION | NXP USA, INC. | 2025-05-01 | — | — | US | disclosed |
| US-20250142923-A1 | SEMICONDUCTOR DEVICE WITH MULTI-STEP GATE AND RECESSED MULTI-STEP FIELD PLATE AND METHOD OF FABRICATION THEREFOR | NXP USA INC (US) | 2025-05-01 | — | — | US | disclosed |
| CN-119413856-A | Gallium oxide-based micro-nano structure detector and preparation method and application thereof | 苏州嘉启顺电子科技有限公司 | 2025-02-11 | — | — | CN | disclosed |
| US-20240395872-A1 | SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCTURE AND METHOD OF FABRICATION THEREFOR | NXP USA, INC. | 2024-11-28 | — | — | US | disclosed |
| EP-4394886-A1 | SEMICONDUCTOR DEVICE WITH A RECESSED FIELD PLATE AND METHOD OF FABRICATION THEREFOR | NXP USA, Inc. (US) | 2024-07-03 | — | — | EP | disclosed |
| CN-118281063-A | Semiconductor device with recessed field plate and method of manufacturing the same | 恩智浦美国有限公司 | 2024-07-02 | — | — | CN | disclosed |
| CN-219827384-U | High-strength aluminum profile | 广东铝多多铝业有限公司 | 2023-10-13 | — | — | CN | disclosed |
| CN-114597273-B | Double-sided silicon carbide PIN structure microstrip radiation detector and preparation method thereof | 中国科学院高能物理研究所 | 2023-09-26 | — | — | CN | disclosed |
| CN-114734674-A | Pressing device of intelligent aluminum profile production line and aluminum profile pressing process | 黄书铁 | 2022-07-12 | — | — | CN | disclosed |
| CN-114597273-A | Double-sided silicon carbide PIN structure microstrip radiation detector and preparation method thereof | 中国科学院高能物理研究所 | 2022-06-07 | — | — | CN | disclosed |