SCHEMBL29695951

SCHEMBL29695951

COc1cc(C(C)OC)cc(I)c1O

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ APP P05067 1/20 0.43
▸ RPS6KA3 P51812 1/20 0.39
▸ LMNA P02545 1/20 0.39
▸ PTGS2 P35354 2/20 0.37
▸ AMY1A P0DUB6 2/20 0.37
▸ IGF1R P08069 1/20 0.37
▸ TRPV1 Q8NER1 2/20 0.36
▸ TTR P02766 1/20 0.35
▸ MAPT P10636 2/20 0.35
▸ KMT2A Q03164 2/20 0.35
▸ KDM4E B2RXH2 1/20 0.35
▸ MEN1 O00255 1/20 0.35
▸ RGS12 O14924 1/20 0.35
▸ GMNN O75496 1/20 0.35
▸ USP2 O75604 1/20 0.35
▸ ALDH1A1 P00352 1/20 0.35
▸ CYP1A2 P05177 1/20 0.35
▸ ALPL P05186 1/20 0.35
▸ POLB P06746 1/20 0.35
▸ CYP3A4 P08684 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24589109 1.00 APP (0.43) APPRPS6KA3LMNAPTGS2AMY1A
SCHEMBL24589185 0.89 APP (0.43) APPRPS6KA3LMNAPTGS2AMY1A
SCHEMBL22991586 0.89 TTR (0.44) APPRPS6KA3LMNATTRKMT2A
SCHEMBL24589219 0.85 APP (0.45) APPRPS6KA3LMNAPTGS2AMY1A
SCHEMBL16271257 0.85 APP (0.45) APPRPS6KA3LMNAPTGS2AMY1A
SCHEMBL29695995 0.84 APP (0.44) APPRPS6KA3LMNAPTGS2AMY1A
SCHEMBL24106144 0.84 APP (0.44) APPRPS6KA3LMNAPTGS2AMY1A
SCHEMBL26857708 0.81 APP (0.42) APPRPS6KA3LMNAAMY1AIGF1R
SCHEMBL24589189 0.79 CCR3 (0.38) APPRPS6KA3LMNAAMY1AIGF1R
SCHEMBL24106136 0.78 APP (0.44) APPRPS6KA3LMNAPTGS2AMY1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116615405-A Compound, polymer, composition for film formation, method for forming pattern, method for forming insulating film, and method for producing compound 三菱瓦斯化学株式会社 2023-08-18 — — CN disclosed
WO-2022138670-A1 COMPOUND, POLYMER, COMPOSITION, FILM-FORMING COMPOSITION, PATTERN FORMATION METHOD, METHOD FOR FORMING INSULATING FILMS, AND COMPOUND PRODUCTION METHOD 三菱瓦斯化学株式会社 2022-06-30 — — WO disclosed
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