SCHEMBL297372

SCHEMBL297372

CCN(C#N)CCC#N

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4634742 0.80
SCHEMBL10701101 0.78
SCHEMBL444554 0.76
SCHEMBL18291050 0.74
SCHEMBL8395779 0.74
SCHEMBL19882342 0.74 CA12 (0.36)
Hydrochloric Acid SCHEMBL11396954 0.74
SCHEMBL64558 0.72
SCHEMBL66260 0.72 LCK (0.46)
SCHEMBL10656671 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2331649-B1 METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES CABOT MICROELECTRONICS CORP (US) 2018-06-13 EP disclosed
CN-1742066-B The siliceous dielectric method of polishing CABOT MICROELECTRONICS CORP. (US) 2015-10-21 CN disclosed
CN-103080256-B Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films BASF SE 2015-06-24 CN disclosed
US-8597540-B2 Compositions for polishing silicon-containing substrates CABOT MICROELECTRONICS CORPORATION (US) 2013-12-03 US disclosed
US-20130200039-A1 AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS BASF SE (DE) 2013-08-08 US disclosed
EP-2613910-A1 PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC FILMS AND POLYSILICON AND/OR SILICON NITRIDE FILMS BASF SE (DE) 2013-07-17 EP disclosed
EP-2614122-A1 AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS BASF SE (DE) 2013-07-17 EP disclosed
US-8486169-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2013-07-16 US disclosed
US-20130168348-A1 AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS BASF SE (DE) 2013-07-04 US disclosed
US-20130171824-A1 PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC FILMS AND POLYSILICON AND/OR SILICON NITRIDE FILMS BASF SE (DE) 2013-07-04 US disclosed
WO-2010014180-A2 METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES CABOT MICROELECTRONICS CORPORATION (US) 2010-02-04 WO disclosed
US-20100029181-A1 Methods and compositions for polishing silicon-containing substrates CMC MATERIALS LLC 2010-02-04 US disclosed
US-20090029633-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC CABOT MICROELECTRONICS CORPORATION (US) 2009-01-29 US disclosed
US-7442645-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2008-10-28 US disclosed
US-20060196848-A1 Readily deinkable toners MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT 2006-09-07 US disclosed
US-20060144824-A1 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2006-07-06 US disclosed
US-7071105-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2006-07-04 US disclosed
EP-1601735-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC Cabot Microelectronics Corporation (US) 2005-12-07 EP disclosed
WO-2004069947-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC CABOT MICROELECTRONICS CORPORATION (US) 2004-08-19 WO disclosed
US-20040152309-A1 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION 2004-08-05 US disclosed