SCHEMBL66260

SCHEMBL66260

CCN(CCC#N)CCC#N

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
LCK P06239 1/20 0.46
TSHR P16473 3/20 0.41
ALDH1A1 P00352 2/20 0.39
TDP1 Q9NUW8 1/20 0.39
DRD3 P35462 1/20 0.38
CASP1 P29466 1/20 0.33
MAPK1 P28482 1/20 0.33
MLYCD O95822 2/20 0.33
LOX P28300 1/20 0.32
LOXL3 P58215 1/20 0.32
LOXL2 Q9Y4K0 1/20 0.32
CYP3A4 P08684 1/20 0.32
NLRP3 Q96P20 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11687703 0.95 TSHR (0.43) LCKTSHRALDH1A1TDP1DRD3
SCHEMBL64558 0.94
Hydrochloric Acid SCHEMBL10492840 0.92 LCK (0.44) LCKTSHRALDH1A1TDP1DRD3
SCHEMBL18392085 0.88 CYP1A2 (0.45) LCKTSHRALDH1A1TDP1DRD3
SCHEMBL18755072 0.88 TSHR (0.50) LCKTSHRDRD3
SCHEMBL21280606 0.86 LCK (0.38) LCKTSHRALDH1A1DRD3CASP1
SCHEMBL29956484 0.82 LCK (0.35) LCKTSHRALDH1A1DRD3CASP1
SCHEMBL17970396 0.82 LCK (0.35) LCKTSHRDRD3CASP1
SCHEMBL6858907 0.82 LCK (0.52) LCKTSHRALDH1A1TDP1DRD3
SCHEMBL146414 0.82 LCK (0.52) LCKTSHRALDH1A1TDP1DRD3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 472 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6743564-B2 A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-01 US claimed
US-12032287-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
US-11994798-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
US-20210063873-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-20210063871-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
EP-3300157-B1 NON-AQUEOUS ELECTROLYTE ADDITIVE, NON-AQUEOUS ELECTROLYTE CONTAINING SAME FOR LITHIUM SECONDARY BATTERY, AND LITHIUM SECONDARY BATTERY LG CHEMICAL LTD (KR) 2019-10-16 EP disclosed
US-20180198157-A1 NON-AQUEOUS ELECTROLYTE ADDITIVE, AND NON-AQUEOUS ELECTROLYTE FOR LITHIUM SECONDARY BATTERY COMPRISING THE SAME AND LITHIUM SECONDARY BATTERY LG CHEM, LTD. (KR) 2018-07-12 US disclosed
EP-1566693-B1 Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition FUJIFILM CORP (JP) 2018-05-23 EP disclosed
EP-3300157-A2 NON-AQUEOUS ELECTROLYTE ADDITIVE, NON-AQUEOUS ELECTROLYTE CONTAINING SAME FOR LITHIUM SECONDARY BATTERY, AND LITHIUM SECONDARY BATTERY LG Chem, Ltd. (KR) 2018-03-28 EP disclosed
EP-1580598-B1 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORP (JP) 2016-10-12 EP disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
US-20020115807-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115821-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115018-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed
US-5894074-A Preparation of tertiary amines from nitriles and secondary amines BASF AKTIENGESELLSCHAFT (DE) 1999-04-13 US disclosed
US-5463130-A Preparation of peralkylated amines BASF AKTIENGESELLSCHAFT (DE) 1995-10-31 US disclosed
US-4038210-A BETA-AMINO NITRILE CATALYSTS FOR POLYURETHANE PREPARATION UNION CARBIDE CORPORATION (US) 1977-07-26 US disclosed