SCHEMBL297937

SCHEMBL297937

C1=CN(C2CCCCC2)CC1

nearest known ligand 0.40

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
ABCB1 P08183 1/20 0.31
SLC18A3 Q16572 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9022032 0.93
SCHEMBL17675664 0.86
SCHEMBL6498117 0.84
SCHEMBL3435214 0.81
SCHEMBL17675373 0.78
SCHEMBL737237 0.77 ALDH1A1 (0.34) SLC18A3
SCHEMBL2005758 0.77 ALDH1A1 (0.34) SLC18A3
SCHEMBL9234746 0.77 ALDH1A1 (0.31)
SCHEMBL3059717 0.75
SCHEMBL28789659 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10831101-B2 Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-11-10 US disclosed
CN-108602338-B Mold release film 尤尼吉可株式会社 2020-08-28 CN disclosed
US-20190113845-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2019-04-18 US disclosed
EP-2331649-B1 METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES CABOT MICROELECTRONICS CORP (US) 2018-06-13 EP disclosed
CN-103080256-B Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films BASF SE 2015-06-24 CN disclosed
US-8597540-B2 Compositions for polishing silicon-containing substrates CABOT MICROELECTRONICS CORPORATION (US) 2013-12-03 US disclosed
US-20130200039-A1 AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS BASF SE (DE) 2013-08-08 US disclosed
EP-2613910-A1 PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC FILMS AND POLYSILICON AND/OR SILICON NITRIDE FILMS BASF SE (DE) 2013-07-17 EP disclosed
EP-2614122-A1 AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS BASF SE (DE) 2013-07-17 EP disclosed
CN-103210047-A Aqueous polishing compositions containing N-substituted diazenium dioxides and/or N'-hydroxy-diazenium oxide salts BASF SE 2013-07-17 CN disclosed
WO-2010014180-A2 METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES CABOT MICROELECTRONICS CORPORATION (US) 2010-02-04 WO disclosed
US-20090029633-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC CABOT MICROELECTRONICS CORPORATION (US) 2009-01-29 US disclosed
US-7442645-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2008-10-28 US disclosed
US-20060196848-A1 Readily deinkable toners MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT 2006-09-07 US disclosed
US-20060144824-A1 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2006-07-06 US disclosed
US-7071105-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2006-07-04 US disclosed
CN-1742066-A Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORP (US) 2006-03-01 CN disclosed
EP-1601735-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC Cabot Microelectronics Corporation (US) 2005-12-07 EP disclosed
WO-2004069947-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC CABOT MICROELECTRONICS CORPORATION (US) 2004-08-19 WO disclosed
US-20040152309-A1 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION 2004-08-05 US disclosed