⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3487372 | 1.00 | — | — | |
| SCHEMBL29466165 | 0.82 | — | — | |
| SCHEMBL269731 | 0.82 | — | — | |
| SCHEMBL29684009 | 0.82 | — | — | |
| SCHEMBL105532 | 0.82 | — | — | |
| SCHEMBL31068666 | 0.82 | — | — | |
| SCHEMBL31068665 | 0.82 | — | — | |
| SCHEMBL31379721 | 0.82 | — | — | |
| SCHEMBL2679609 | 0.82 | — | — | |
| SCHEMBL338148 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119907619-A | Magnetic tunnel junction and magnetic memory | 中国科学院微电子研究所 | 2025-04-29 | — | — | CN | claimed |
| US-5629922-A | Electron tunneling device using ferromagnetic thin films | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1997-05-13 | — | — | US | claimed |
| CN-119907619-A | Magnetic tunnel junction and magnetic memory | 中国科学院微电子研究所 | 2025-04-29 | — | — | CN | disclosed |
| US-7772630-B2 | Magnetic switching element of a magnetic memory cell having a ferromagnetic layer formed between a gate insulating film and a magnetic semiconductor layer | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-08-10 | — | — | US | disclosed |
| CN-100501865-C | Magnetic memory | TOSHIBA KK (JP) | 2009-06-17 | — | — | CN | disclosed |
| CN-100449814-C | Magneto-resistance effect element, magnetic memory and magnetic head | TOSHIBA KK (JP) | 2009-01-07 | — | — | CN | disclosed |
| CN-100407470-C | magnetic switch element and magnetic memory | TOSHIBA CORP (JP) | 2008-07-30 | — | — | CN | disclosed |
| US-20080121945-A1 | MAGNETIC SWITCHING ELEMENT AND A MAGNETIC MEMORY | KABUSHIKI KAISHA TOSHIBA (JP) | 2008-05-29 | — | — | US | disclosed |
| US-7349247-B2 | Multi-layer magnetic switching element comprising a magnetic semiconductor layer having magnetization induced by applied voltage | KABUSHIKI KAISHA TOSHIBA (JP) | 2008-03-25 | — | — | US | disclosed |
| CN-100342451-C | Magnetic memory | TOSHIBA KK (JP) | 2007-10-10 | — | — | CN | disclosed |
| CN-1290117-C | Magnetic memory | TOSHIBA KK (JP) | 2006-12-13 | — | — | CN | disclosed |
| CN-1433020-A | Magnetic memory | TOSHIBA KK (JP) | 2003-07-30 | — | — | CN | disclosed |
| CN-1433021-A | Magnetic memory | TOSHIBA KK (JP) | 2003-07-30 | — | — | CN | disclosed |
| CN-1430292-A | Magnetic switch element and magnetic memory | TOSHIBA KK (JP) | 2003-07-16 | — | — | CN | disclosed |
| EP-0894342-A1 | GEOMETRICALLY ENHANCED MAGNETORESISTANCE IN TRILAYER TUNNEL JUNCTIONS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1999-02-03 | — | — | EP | disclosed |
| US-5835314-A | Tunnel junction device for storage and switching of signals | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1998-11-10 | — | — | US | disclosed |
| WO-1997039488-A1 | GEOMETRICALLY ENHANCED MAGNETORESISTANCE IN TRILAYER TUNNEL JUNCTIONS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1997-10-23 | — | — | WO | disclosed |
| EP-0445957-B1 | Magneto-optical disk and method of reproducing the same | SHARP KK (JP) | 1996-05-22 | — | — | EP | disclosed |
| US-5187703-A | MAGNETO-OPTICAL MULTILAYER RECORDING DISK AND METHOD OF REPRODUCING THE SAME | SHARP KABUSHIKI KAISHA (JP) | 1993-02-16 | — | — | US | disclosed |
| EP-0445957-A2 | Magneto-optical disk and method of reproducing the same | SHARP KABUSHIKI KAISHA (JP) | 1991-09-11 | — | — | EP | disclosed |