⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2980214 | 1.00 | — | — | |
| SCHEMBL29466165 | 0.82 | — | — | |
| SCHEMBL269731 | 0.82 | — | — | |
| SCHEMBL29684009 | 0.82 | — | — | |
| SCHEMBL105532 | 0.82 | — | — | |
| SCHEMBL31068666 | 0.82 | — | — | |
| SCHEMBL31068665 | 0.82 | — | — | |
| SCHEMBL31379721 | 0.82 | — | — | |
| SCHEMBL2679609 | 0.82 | — | — | |
| SCHEMBL338148 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1772973-A | Heat balance growing method for magnetic semiconductor gallium, manganese and antimony single crystal | INST OF SEMICONDUCTORS CAS (CN) | 2006-05-17 | — | — | CN | claimed |
| CN-1216406-C | Magnetic p-n junction thin film material and mfg. method thereof | INST SEMICONDUCTORS CAS (CN) | 2005-08-24 | — | — | CN | claimed |
| CN-1452216-A | Magnetic p-n junction thin film material and mfg. method thereof | INST SEMICONDUCTORS CAS (CN) | 2003-10-29 | — | — | CN | claimed |
| US-7852667-B2 | ST-RAM employing a magnetic resonant tunneling diode as a spacer layer | SEAGATE TECHNOLOGY LLC (US) | 2010-12-14 | — | — | US | disclosed |
| US-20100103727-A1 | ST-RAM EMPLOYING A MAGNETIC RESONANT TUNNELING DIODE AS A SPACER LAYER | SEAGATE TECHNOLOGY LLC (US) | 2010-04-29 | — | — | US | disclosed |
| CN-100449617-C | Recording method for phase change type optical recording medium | RICOH KK (JP) | 2009-01-07 | — | — | CN | disclosed |
| CN-1772973-A | Heat balance growing method for magnetic semiconductor gallium, manganese and antimony single crystal | INST OF SEMICONDUCTORS CAS (CN) | 2006-05-17 | — | — | CN | disclosed |
| CN-1772973-A | Heat balance growing method for magnetic semiconductor gallium, manganese and antimony single crystal | INST OF SEMICONDUCTORS CAS (CN) | 2006-05-17 | — | — | CN | disclosed |
| CN-1216406-C | Magnetic p-n junction thin film material and mfg. method thereof | INST SEMICONDUCTORS CAS (CN) | 2005-08-24 | — | — | CN | disclosed |
| CN-1174467-C | Method for mfg. semiconductor/magnet/semicondustor threelayer structure | 中国科学院半导体研究所 | 2004-11-03 | — | — | CN | disclosed |
| CN-1494065-A | Recording method for phase change type optical recording medium | 株式会社理光 | 2004-05-05 | — | — | CN | disclosed |
| CN-1452216-A | Magnetic p-n junction thin film material and mfg. method thereof | INST SEMICONDUCTORS CAS (CN) | 2003-10-29 | — | — | CN | disclosed |
| CN-1421878-A | Prepn of ferromagnetic semiconductor with graded components | INST OF SEMICONDUCTORS CAS (CN) | 2003-06-04 | — | — | CN | disclosed |
| CN-1402305-A | Method for mfg. semiconductor/magnet/semicondustor threelayer structure | INST SEMICONDUCTORS CAS (CN) | 2003-03-12 | — | — | CN | disclosed |