Dimethylamine

Dimethylamine

SCHEMBL29845404

CNC.[Li]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Dimethylamine SCHEMBL1330452 0.89
Dimethylamine SCHEMBL12415750 0.89
Dimethylamine SCHEMBL5164633 0.89
Dimethylamine SCHEMBL392668 0.89
Dimethylamine SCHEMBL1030 0.89
Dimethylamine SCHEMBL13695986 0.89
Dimethylamine SCHEMBL733 0.80
Dimethylamine SCHEMBL1003093 0.80 KDM4E (0.38)
Dimethylamine SCHEMBL7601721 0.80
Dimethylamine SCHEMBL11567323 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117551119-A Preparation method of novel dimer compound containing boron-nitrogen polar bond 电子科技大学长三角研究院(湖州) 2024-02-13 CN claimed
CN-224100691-U Purification device of high-purity tetra (dimethylamino) titanium 苏州凛泓材料科技有限公司 2026-04-10 CN disclosed
US-12473647-B2 Composition for depositing antimony-containing thin film and method for manufacturing antimony-containing thin film using the same DNF CO., LTD. (KR) 2025-11-18 US disclosed
US-20250289834-A1 SILICON COMPOUND AND METHOD OF PRODUCING SILICON-CONTAINING THIN FILM USING THE SAME DNF CO., LTD. (KR) 2025-09-18 US disclosed
CN-120463737-A Purification process of high-purity tetra (dimethylamino) titanium 苏州凛泓材料科技有限公司 2025-08-12 CN disclosed
US-12195488-B2 Organometallic compounds and thin film using same MERCK PATENT GMBH (DE) 2025-01-14 US disclosed
WO-2025005625-A1 COMPOSITION FOR DEPOSITING ANTIMONY-CONTAINING THIN FILM, AND METHOD FOR MANUFACTURING ANTIMONY-CONTAINING THIN FILM BY USING SAME (주)디엔에프 2025-01-02 WO disclosed
CN-118668177-A Hafnium oxide film and preparation method and application thereof 大连恒坤新材料有限公司 2024-09-20 CN disclosed
CN-117551119-A Preparation method of novel dimer compound containing boron-nitrogen polar bond 电子科技大学长三角研究院(湖州) 2024-02-13 CN disclosed
CN-117551119-A Preparation method of novel dimer compound containing boron-nitrogen polar bond 电子科技大学长三角研究院(湖州) 2024-02-13 CN disclosed
WO-2023239152-A1 THIN FILM PRECURSOR COMPOUND, METHOD FOR FORMING THIN FILM BY USING SAME, AND SEMICONDUCTOR SUBSTRATE MANUFACTURED THEREBY 솔브레인 주식회사 2023-12-14 WO disclosed
CN-116355019-A Composition for vapor deposition of antimony-containing film, process for producing antimony-containing film, and antimony compound DNF有限公司 2023-06-30 CN disclosed
US-20230203655-A1 COMPOSITION FOR DEPOSITING ANTIMONY-CONTAINING THIN FILM AND METHOD FOR MANUFACTURING ANTIMONY-CONTAINING THIN FILM USING THE SAME DNF CO., LTD. (KR) 2023-06-29 US disclosed
CN-115028654-A Method for producing zirconium tetra (dimethylamine) 芯越芯(南京)电子科技有限公司 2022-09-09 CN disclosed