SCHEMBL2988710

SCHEMBL2988710

[Cu]C1=CC=CC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7153912 0.97
Phosphine SCHEMBL7153914 0.97
Ethylene SCHEMBL9982853 0.94
SCHEMBL7644177 0.91
SCHEMBL7647795 0.87
Thiophene SCHEMBL27981613 0.83
SCHEMBL515428 0.83
SCHEMBL7035378 0.83
SCHEMBL7645558 0.83
SCHEMBL6814268 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6077571-A VAPOR DEPOSITION; APPLYING ELECTRICAL BIAS THE RESEARCH FOUNDATION OF STATE UNIVERSITY OF NEW YORK (US) 2000-06-20 US claimed
US-5312509-A Manufacturing system for low temperature chemical vapor deposition of high purity metals INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-05-17 US claimed
JP-4267331-A None JP disclosed
CN-116536644-A Method of forming copper iodide layer and structure including copper iodide layer ASM IP私人控股有限公司 2023-08-04 CN disclosed
EP-3301719-B1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE SONY GROUP CORP (JP) 2022-07-27 EP disclosed
CN-112292478-A Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials ASM IP私人控股有限公司 2021-01-29 CN disclosed
CN-112292477-A Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials ASM IP私人控股有限公司 2021-01-29 CN disclosed
CN-103896222-B The preparation method of ultrathin nanometer chip semiconductor material UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (CN) 2016-01-20 CN disclosed
CN-103896222-A Ultrathin nanosheet semiconductor material and preparation method and application thereof USTC UNIV SCIENCE TECH CN 2014-07-02 CN disclosed
CN-102177166-A Method for producing mono-carboxyfunctionalized dialkylphosphinic acids and esters and salts thereof by means of vinylenes/nitriles and use thereof CLARIANT FINANCE BVI LTD 2011-09-07 CN disclosed
US-7777059-B2 Copper(I) formate complexes BASF SE (DE) 2010-08-17 US disclosed
US-5312509-A Manufacturing system for low temperature chemical vapor deposition of high purity metals INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-05-17 US disclosed
WO-1994007268-A1 HIGH EFFICIENCY SOLAR PHOTOVOLTAIC CELLS PRODUCED WITH INEXPENSIVE MATERIALS BY PROCESSES SUITABLE FOR LARGE VOLUME PRODUCTION MOWLES THOMAS A (US) 1994-03-31 WO disclosed
EP-0528795-A1 APPARATUS FOR LOW TEMPERATURE CVD OF METALS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1993-03-03 EP disclosed
JP-H04267331-A FORMATION OF COPPER THIN FILM TOSHIBA CORP 1992-09-22 JP disclosed
EP-0297348-B1 METHOD FOR CHEMICAL VAPOR DEPOSITION OF COPPER, SILVER, AND GOLD USING A CYCLOPENTADIENYL METAL COMPLEX International Business Machines Corporation (US) 1992-03-04 EP disclosed
WO-1991017284-A1 APPARATUS FOR LOW TEMPERATURE CVD OF METALS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1991-11-14 WO disclosed
US-4948623-A Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1990-08-14 US disclosed
EP-0297348-A1 Method for chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl metal complex International Business Machines Corporation (US) 1989-01-04 EP disclosed
US-3989806-A Low temperature catalytic oxidation of chlorinated organic compounds to recover chlorine values VULCAN MATERIALS COMPANY (US) 1976-11-02 US disclosed