SCHEMBL2992262

SCHEMBL2992262

C[SiH](O)[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13509330 0.72
SCHEMBL313276 0.72
SCHEMBL6238690 0.72
SCHEMBL33737 0.72
SCHEMBL8381557 0.72
SCHEMBL260973 0.72
Phosphine SCHEMBL11051257 0.67
Methane SCHEMBL6433909 0.67
SCHEMBL3889973 0.67
SCHEMBL13316774 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101611043-B Material for forming silicon-containing film, and silicon-containing insulating film and method for forming the same JSR CORP 2013-03-13 CN disclosed
US-20100174103-A1 MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME JSR CORPORATION (JP) 2010-07-08 US disclosed
CN-101611043-A Containing silicon fiml forms with material and contains silicon insulating film and forming method thereof JSR CORP (JP) 2009-12-23 CN disclosed
EP-2123658-A1 MATERIAL FOR FORMING SILICON-CONTAINING FILM, AND SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME JSR Corporation (JP) 2009-11-25 EP disclosed
US-20030042140-A1 Chemical furface for control of electroosmosis by an applied external voltage field ARIZONA BOARD OF REGENTS 2003-03-06 US disclosed
US-3998991-A Transparent abrasion-resistant coating for a styrene acrylonitrile copolymer and method GENERAL MOTORS CORPORATION (US) 1976-12-21 US disclosed