⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL561792 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL2961368 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL12984477 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL219927 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL5535903 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL11509216 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL17159788 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL9618334 | 1.00 | — | — | |
| Methane SCHEMBL25292117 | 0.82 | — | — | |
| Fluoride SCHEMBL2982750 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-103515421-B | Semiconductor structure and manufacturing process thereof | 联华电子股份有限公司 | 2018-03-27 | — | — | CN | claimed |
| US-9076784-B2 | Transistor and semiconductor structure | UNITED MICROELECTRONICS CORP. (TW) | 2015-07-07 | — | — | US | claimed |
| US-20140346616-A1 | TRANSISTOR AND SEMICONDUCTOR STRUCTURE | UNITED MICROELECTRONICS CORP. (TW) | 2014-11-27 | — | — | US | claimed |
| US-8836049-B2 | Semiconductor structure and process thereof | UNITED MICROELECTRONICS CORP. (TW) | 2014-09-16 | — | — | US | claimed |
| CN-103515421-A | Semiconductor structure and manufacturing process thereof | UNITED MICROELECTRONICS CORP | 2014-01-15 | — | — | CN | claimed |
| US-20130334690-A1 | SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF | UNITED MICROELECTRONICS CORP. (TW) | 2013-12-19 | — | — | US | claimed |
| US-7741209-B2 | Contact structure of semiconductor device and method for fabricating the same | HYNIX SEMICONDUCTOR INC. (KR) | 2010-06-22 | — | — | US | claimed |
| US-20070141837-A1 | Contact Structure of Semiconductor Device and Method for Fabricating the Same | HYNIX SEMICONDUCTOR INC. (KR) | 2007-06-21 | — | — | US | claimed |
| US-20230041521-A1 | CONDUCTIVE PILLAR, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING BONDED STRUCTURE | DIC CORPORATION (JP) | 2023-02-09 | — | — | US | disclosed |
| CN-103515421-B | Semiconductor structure and manufacturing process thereof | 联华电子股份有限公司 | 2018-03-27 | — | — | CN | disclosed |
| US-9076784-B2 | Transistor and semiconductor structure | UNITED MICROELECTRONICS CORP. (TW) | 2015-07-07 | — | — | US | disclosed |
| US-20140346616-A1 | TRANSISTOR AND SEMICONDUCTOR STRUCTURE | UNITED MICROELECTRONICS CORP. (TW) | 2014-11-27 | — | — | US | disclosed |
| US-8836049-B2 | Semiconductor structure and process thereof | UNITED MICROELECTRONICS CORP. (TW) | 2014-09-16 | — | — | US | disclosed |
| CN-103515421-A | Semiconductor structure and manufacturing process thereof | UNITED MICROELECTRONICS CORP | 2014-01-15 | — | — | CN | disclosed |
| US-6028359-A | Integrated circuit having amorphous silicide layer in contacts and vias and method of manufacture therefor | LUCENT TECHNOLOGIES INC. (US) | 2000-02-22 | — | — | US | disclosed |
| US-6007684-A | Process for forming improved titanium-containing barrier layers | APPLIED MATERIALS, INC. (US) | 1999-12-28 | — | — | US | disclosed |
| US-5858184-A | Process for forming improved titanium-containing barrier layers | APPLIED MATERIALS, INC. (US) | 1999-01-12 | — | — | US | disclosed |
| US-5858873-A | Integrated circuit having amorphous silicide layer in contacts and vias and method of manufacture thereof | LUCENT TECHNOLOGIES INC. (US) | 1999-01-12 | — | — | US | disclosed |
| EP-0791663-A1 | Titanium nitride barrier layers | APPLIED MATERIALS, INC. (US) | 1997-08-27 | — | — | EP | disclosed |
| EP-0747499-A1 | Process for forming titanium containing barrier layers | APPLIED MATERIALS, INC. (US) | 1996-12-11 | — | — | EP | disclosed |