SCHEMBL299919

SCHEMBL299919

FOF.[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL50020 1.00
SCHEMBL15954901 0.91
SCHEMBL8627358 0.91
Fluoride SCHEMBL27720944 0.91
Hydrochloric Acid SCHEMBL6870529 0.91
SCHEMBL26338382 0.89
SCHEMBL27777051 0.89
SCHEMBL45345 0.89
Strontium SCHEMBL5886585 0.84
Calcium SCHEMBL8630626 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 45 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-104241319-B Organic light emitting diode display 三星显示有限公司 2019-05-28 CN claimed
US-9896549-B2 Hydrophobic and oleophobic coatings UNIVERSITY OF WEST VIRGINIA 2018-02-20 US claimed
EP-2190641-B1 SILICONE MOLD AND USE THEREOF 3M INNOVATIVE PROPERTIES CO (US) 2012-10-03 EP claimed
EP-1171396-B1 SILICEOUS SUBSTRATE WITH A SILANE LAYER AND ITS MANUFACTURE ICT COATINGS N V (BE) 2003-05-28 EP claimed
EP-1171396-A1 SILICEOUS SUBSTRATE WITH A SILANE LAYER AND ITS MANUFACTURE ICT Coatings N.V. (BE) 2002-01-16 EP claimed
WO-2000063129-A1 SILICEOUS SUBSTRATE WITH A SILANE LAYER AND ITS MANUFACTURE ICT COATINGS N.V. (BE) 2000-10-26 WO claimed
EP-0953066-A1 INDUCTIVELY COUPLED PLASMA CVD LAM RESEARCH CORPORATION (US) 1999-11-03 EP claimed
WO-1998028465-A1 INDUCTIVELY COUPLED PLASMA CVD LAM RESEARCH CORPORATION (US) 1998-07-02 WO claimed
US-20240090214-A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME SK Hynix Inc. (KR) 2024-03-14 US disclosed
US-20230317636-A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF SK Hynix Inc. (KR) 2023-10-05 US disclosed
CN-113471096-A Method and system for detecting process chamber conditions and computer readable medium 台湾积体电路制造股份有限公司 2021-10-01 CN disclosed
US-9896549-B2 Hydrophobic and oleophobic coatings UNIVERSITY OF WEST VIRGINIA 2018-02-20 US disclosed
US-9293410-B2 Semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2016-03-22 US disclosed
EP-2427278-B1 MEDICINAL INHALATION DEVICES AND COMPONENTS THEREOF 3M INNOVATIVE PROPERTIES CO (US) 2015-09-23 EP disclosed
US-20030104679-A1 Backside metallization on microelectronic dice having beveled sides for effective thermal contact with heat dissipation devices INTEL CORPORATION 2003-06-05 US disclosed
EP-1171396-B1 SILICEOUS SUBSTRATE WITH A SILANE LAYER AND ITS MANUFACTURE ICT COATINGS N V (BE) 2003-05-28 EP disclosed
US-6379448-B1 KITS FOR APPLYING SILANE TO SUBSTRATE A FLUOROPOLYSILOXANE LAYER ICT COATINGS N.V. (BE) 2002-04-30 US disclosed
EP-1171396-A1 SILICEOUS SUBSTRATE WITH A SILANE LAYER AND ITS MANUFACTURE ICT Coatings N.V. (BE) 2002-01-16 EP disclosed
CN-1304172-A Method for manufacturing semiconductor device MITSUBISHI ELECTRIC MACHINERY (JP) 2001-07-18 CN disclosed
WO-2000063129-A1 SILICEOUS SUBSTRATE WITH A SILANE LAYER AND ITS MANUFACTURE ICT COATINGS N.V. (BE) 2000-10-26 WO disclosed