SCHEMBL3003418

SCHEMBL3003418

CC=CC=Cc1ccco1

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
F2 P00734 2/20 0.56
MASP2 O00187 1/20 0.56
MAPT P10636 10/20 0.49
HCAR2 Q8TDS4 1/20 0.47
ALDH1A1 P00352 8/20 0.46
MEN1 O00255 5/20 0.46
KMT2A Q03164 5/20 0.46
L3MBTL1 Q9Y468 4/20 0.46
KDM4E B2RXH2 4/20 0.46
TDP1 Q9NUW8 3/20 0.46
HPGD P15428 2/20 0.46
ATM Q13315 1/20 0.46
HSD17B10 Q99714 1/20 0.46
POLB P06746 4/20 0.42
HTT P42858 2/20 0.42
THRB P10828 1/20 0.42
MDM2 Q00987 1/20 0.42
KDM4C Q9H3R0 1/20 0.42
PKM P14618 1/20 0.41
RECQL P46063 3/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3003413 1.00 F2 (0.56) F2MASP2MAPTHCAR2ALDH1A1
SCHEMBL11153607 0.98 F2 (0.55) F2MASP2MAPTHCAR2ALDH1A1
SCHEMBL11153560 0.98 F2 (0.55) F2MASP2MAPTHCAR2ALDH1A1
SCHEMBL9298138 0.89 F2 (0.67) F2MASP2MAPTHCAR2ALDH1A1
SCHEMBL9298131 0.89 F2 (0.67) F2MASP2MAPTHCAR2ALDH1A1
SCHEMBL10745928 0.84
SCHEMBL10745931 0.84
SCHEMBL2167348 0.84
SCHEMBL2167346 0.84
SCHEMBL629218 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-105461670-B 1- (2- furyl) -1,3- pentadiene class compound and preparation method thereof, application 西华大学 2018-12-04 CN claimed
CN-105461670-A 1-(2-furyl)-1,3-pentadiene compounds as well as preparation method and application thereof UNIV XIHUA 2016-04-06 CN claimed
US-8207059-B2 Silicon compound, ultraviolet absorbent, method for manufacturing multilayer wiring device and multilayer wiring device FUJITSU LIMITED (JP) 2012-06-26 US claimed
US-7830012-B2 Polycarbosilane substituted with a benzyl or diazo group and/or a polysilazane having a substituent capable of absorbing light; blocks ultraviolet light applied to a porous insulating film FUJITSU LIMITED (JP) 2010-11-09 US claimed
US-20100176496-A1 MATERIAL FOR FORMING EXPOSURE LIGHT-BLOCKING FILM, MULTILAYER INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-07-15 US claimed
US-7728065-B2 Polycarbosilane substituted with a benzyl or diazo group and/or a polysilazane having a substituent capable of absorbing exposure light; high exposure light (particularly ultraviolet light) absorptivity, which efficiently blocks the exposure light that reaches porous insulating films FUJITSU LIMITED (JP) 2010-06-01 US claimed
EP-2028215-A1 Silicon compound, ultraviolet absorbent, method for manufacturing multilayer wiring device and multilayer wiring device Fujitsu Limited (JP) 2009-02-25 EP claimed
US-20090038833-A1 SILICON COMPOUND, ULTRAVIOLET ABSORBENT, METHOD FOR MANUFACTURING MULTILAYER WIRING DEVICE AND MULTILAYER WIRING DEVICE FUJITSU LIMITED (JP) 2009-02-12 US claimed
US-20070190461-A1 Polycarbosilane substituted with a benzyl or diazo group and/or a polysilazane having a substituent capable of absorbing exposure light; high exposure light (particularly ultraviolet light) absorptivity, which efficiently blocks the exposure light that reaches porous insulating films FUJITSU LIMITED (JP) 2007-08-16 US claimed
CN-105461670-B 1- (2- furyl) -1,3- pentadiene class compound and preparation method thereof, application 西华大学 2018-12-04 CN disclosed
CN-105461670-B 1- (2- furyl) -1,3- pentadiene class compound and preparation method thereof, application 西华大学 2018-12-04 CN disclosed
CN-105461670-B 1- (2- furyl) -1,3- pentadiene class compound and preparation method thereof, application 西华大学 2018-12-04 CN disclosed
EP-2028215-B1 SILICON COMPOUND, ULTRAVIOLET ABSORBENT, METHOD FOR MANUFACTURING MULTILAYER WIRING DEVICE AND MULTILAYER WIRING DEVICE FUJITSU LTD (JP) 2018-08-01 EP disclosed
CN-105461670-A 1-(2-furyl)-1,3-pentadiene compounds as well as preparation method and application thereof UNIV XIHUA 2016-04-06 CN disclosed
US-20100133692-A1 PROCESS FOR PRODUCING SILICIC COATING, SILICIC COATING AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-06-03 US disclosed
US-7728065-B2 Polycarbosilane substituted with a benzyl or diazo group and/or a polysilazane having a substituent capable of absorbing exposure light; high exposure light (particularly ultraviolet light) absorptivity, which efficiently blocks the exposure light that reaches porous insulating films FUJITSU LIMITED (JP) 2010-06-01 US disclosed
CN-101649053-A Silicon compound, multilayer wiring device , method for manufacturing the same FUJITSU LTD JP 2010-02-17 CN disclosed
EP-2028215-A1 Silicon compound, ultraviolet absorbent, method for manufacturing multilayer wiring device and multilayer wiring device Fujitsu Limited (JP) 2009-02-25 EP disclosed
US-20090038833-A1 SILICON COMPOUND, ULTRAVIOLET ABSORBENT, METHOD FOR MANUFACTURING MULTILAYER WIRING DEVICE AND MULTILAYER WIRING DEVICE FUJITSU LIMITED (JP) 2009-02-12 US disclosed
US-20070190461-A1 Polycarbosilane substituted with a benzyl or diazo group and/or a polysilazane having a substituent capable of absorbing exposure light; high exposure light (particularly ultraviolet light) absorptivity, which efficiently blocks the exposure light that reaches porous insulating films FUJITSU LIMITED (JP) 2007-08-16 US disclosed