SCHEMBL3015673

SCHEMBL3015673

CC(C)(c1ccc(O)cc1)c1ccc(CCc2ccc(O)cc2)cc1

nearest known ligand 0.73

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 9/20 0.73
ESR2 Q92731 8/20 0.73
ESRRG P62508 3/20 0.73
CYP3A4 P08684 2/20 0.73
AR P10275 1/20 0.73
HPGD P15428 1/20 0.73
TSHR P16473 1/20 0.73
SLC6A2 P23975 1/20 0.73
SLC6A4 P31645 1/20 0.73
HTR6 P50406 1/20 0.73
SLC6A3 Q01959 1/20 0.73
HSD17B10 Q99714 1/20 0.73
ALDH1A1 P00352 1/20 0.61
MEN1 O00255 1/20 0.60
KMT2A Q03164 1/20 0.60
ESRRB O95718 1/20 0.53
LMNA P02545 1/20 0.52
TYR P14679 1/20 0.52
LTA4H P09960 1/20 0.52
CA2 P00918 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27813218 0.90 ESR1 (0.64) ESR1ESR2ESRRGCYP3A4AR
SCHEMBL27625133 0.87 ESR1 (0.55) ESR1ESR2ESRRGCYP3A4AR
Bisphenol A SCHEMBL5291081 0.86 ESR1 (0.73) ESR1ESR2ESRRGCYP3A4AR
SCHEMBL7942894 0.86 ESR1 (0.73) ESR1ESR2ESRRGCYP3A4AR
SCHEMBL27813177 0.86 ESR1 (0.63) ESR1ESR2ESRRGCYP3A4AR
SCHEMBL27645521 0.86 PTGS1 (0.57) ESR1ESR2ESRRGCYP3A4AR
Bisphenol A SCHEMBL11575663 0.86 ESR1 (0.58) ESR1ESR2ESRRGCYP3A4AR
SCHEMBL27996 0.85 ESR1 (1.00) ESR1ESR2ESRRGCYP3A4AR
Bisphenol A SCHEMBL3170263 0.85 ESR1 (1.00) ESR1ESR2ESRRGCYP3A4AR
Bisphenol A SCHEMBL9774987 0.85 ESR1 (1.00) ESR1ESR2ESRRGCYP3A4AR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117836927-A Resin cured film, semiconductor device, and method for manufacturing semiconductor device 株式会社力森诺科 2024-04-05 CN disclosed
CN-114207038-B Resin composition, method for producing cured product, pattern cured product, interlayer insulating film, covercoat, surface protective film, and electronic component 艾曲迪微系统股份有限公司 2024-03-22 CN disclosed
CN-117280447-A Photosensitive resin composition selection method, pattern cured film production method, cured film, semiconductor device, and semiconductor device production method 株式会社力森诺科 2023-12-22 CN disclosed
CN-110582726-B Positive photosensitive resin composition, thermal crosslinking agent for positive photosensitive resin, pattern cured film, method for producing pattern cured film, semiconductor element, and electronic device 株式会社力森诺科 2023-08-04 CN disclosed
CN-116194840-A Photosensitive resin composition, permanent resist, method for forming permanent resist, and method for inspecting cured film for permanent resist 株式会社力森诺科 2023-05-30 CN disclosed
CN-115398339-A Photosensitive resin composition, method for producing patterned cured film, and semiconductor device 昭和电工材料株式会社 2022-11-25 CN disclosed
CN-115151868-A Photosensitive resin composition, method for sorting photosensitive resin composition, method for producing patterned cured film, and method for producing semiconductor device 昭和电工材料株式会社 2022-10-04 CN disclosed
CN-114207038-A Resin composition, method for producing cured product, patterned cured product, interlayer insulating film, covercoat, surface protective film, and electronic component 艾曲迪微系统股份有限公司 2022-03-18 CN disclosed
CN-104823110-B Photosensitive resin composition, photosensitive film, and method for forming resist pattern 昭和电工材料株式会社 2021-06-04 CN disclosed
CN-107207456-B Latent acids and their use 巴斯夫欧洲公司 2021-05-04 CN disclosed
CN-101473268-A Oxime sulfonates and the use therof as latent acids CIBA HOLDING INC (CH) 2009-07-01 CN disclosed
CN-100475798-C Sulfonate derivatives and the use therof as latent acids CIBA SC HOLDING AG (CH) 2009-04-08 CN disclosed
CN-101213169-A Sulphonium salt initiators CIBA SC HOLDING AG (CH) 2008-07-02 CN disclosed
CN-100336137-C Composition for forming photosensitive dielectric material, and transfer film, dielectric material and electronic parts using the same JSR CORP (JP) 2007-09-05 CN disclosed
CN-1989455-A Oxime derivatives and the use therof as latent acids CIBA SC HOLDING AG (CH) 2007-06-27 CN disclosed
CN-1213343-C Iodonium salt used as potential acid provider CIBA SPECIATY CHEMICALS HOLDIN (CH) 2005-08-03 CN disclosed
CN-1628268-A Sulfonic acid derivatives and their use as latent acids CIBA SC HOLDING AG (CH) 2005-06-15 CN disclosed
CN-1505820-A Composition for forming photosensitive dielectric, and decal film, dielectric and electronic component using the same ������ʱ����ʽ���� 2004-06-16 CN disclosed
CN-1306224-A Iodonium salt used as potential acid provider CIBA SPECIATY CHEMICALS HOLDIN (CH) 2001-08-01 CN disclosed
US-RE37179-E1 ADDITION POLYMER JSR CORPORATION (JP) 2001-05-15 US disclosed