⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31255150 | 0.78 | ALDH1A1 (0.41) | — | |
| SCHEMBL31531476 | 0.69 | — | — | |
| SCHEMBL31255165 | 0.67 | HTR2A (0.32) | — | |
| SCHEMBL20378677 | 0.66 | — | — | |
| SCHEMBL525644 | 0.64 | — | — | |
| SCHEMBL11599049 | 0.62 | CYP1A2 (0.33) | — | |
| SCHEMBL20972491 | 0.62 | CYP1A2 (0.33) | — | |
| SCHEMBL22165510 | 0.61 | — | — | |
| SCHEMBL18065084 | 0.61 | — | — | |
| SCHEMBL16926032 | 0.59 | HTR2A (0.37) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260092366-A1 | DIELECTRIC FILM ACTIVATOR, AND SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME | SOULBRAIN CO LTD (KR) | 2026-04-02 | — | — | US | disclosed |
| US-20250207251-A1 | VACUUM-BASED THIN FILM MODIFIER, THIN FILM MODIFICATION COMPOSITION INCLUDING VACUUM-BASED THIN FILM MODIFIER, METHOD OF FORMING THIN FILM USING THIN FILM MODIFICATION COMPOSITION, SEMICONDUCTOR SUBSTRATE INCLUDING THIN FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | SOULBRAIN CO LTD (KR) | 2025-06-26 | — | — | US | disclosed |
| US-20250207255-A1 | THIN FILM MODIFICATION COMPOSITION, METHOD OF FORMING THIN FILM USING THIN FILM MODIFICATION COMPOSITION, SEMICONDUCTOR SUBSTRATE INCLUDING THIN FILM, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR | SOULBRAIN CO., LTD. (KR) | 2025-06-26 | — | — | US | disclosed |
| US-20250191911-A1 | METHOD OF FORMING THIN FILM, SEMICONDUCTOR SUBSTRATE FABRICATED USING METHOD, AND SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE | SOULBRAIN CO., LTD. (KR) | 2025-06-12 | — | — | US | disclosed |
| CN-119998490-A | Dielectric film activator, semiconductor substrate manufactured using the same, and semiconductor device | 秀博瑞殷株式公社 | 2025-05-13 | — | — | CN | disclosed |
| CN-119137308-A | Film-modifying composition, method for forming film using same, semiconductor substrate manufactured by the method, and semiconductor device | 秀博瑞殷株式公社 | 2024-12-13 | — | — | CN | disclosed |
| CN-118974313-A | Activator, method for forming thin film using same, semiconductor substrate manufactured thereby, and semiconductor element | 秀博瑞殷株式公社 | 2024-11-15 | — | — | CN | disclosed |
| CN-118974312-A | Film-modifying composition, method for forming film using same, semiconductor substrate manufactured by the method, and semiconductor device | 秀博瑞殷株式公社 | 2024-11-15 | — | — | CN | disclosed |
| CN-118922582-A | Thin film masking agent, thin film forming method using the same, semiconductor substrate manufactured by the method, and semiconductor device | 秀博瑞殷株式公社 | 2024-11-08 | — | — | CN | disclosed |
| CN-118872027-A | Vacuum film modifier, film modifying composition containing the same, film forming method using the same, semiconductor substrate manufactured by the method, and semiconductor element | 秀博瑞殷株式公社 | 2024-10-29 | — | — | CN | disclosed |
| CN-118871612-A | Film-modifying composition, method for forming film using same, semiconductor substrate manufactured by the method, and semiconductor device | 秀博瑞殷株式公社 | 2024-10-29 | — | — | CN | disclosed |
| CN-118871617-A | Masking compound, method for forming thin film using the same, semiconductor substrate prepared by the method, and semiconductor device | 秀博瑞殷株式公社 | 2024-10-29 | — | — | CN | disclosed |
| CN-118871616-A | Thin film forming method, semiconductor substrate manufactured by the method, and semiconductor device | 秀博瑞殷株式公社 | 2024-10-29 | — | — | CN | disclosed |
| CN-118871613-A | Film-modifying composition, method for forming film using the same, semiconductor substrate manufactured by the method, and semiconductor device | 秀博瑞殷株式公社 | 2024-10-29 | — | — | CN | disclosed |
| CN-118843710-A | Step coverage improving agent, thin film forming method using the same, semiconductor substrate manufactured by the method, and semiconductor device | 秀博瑞殷株式公社 | 2024-10-25 | — | — | CN | disclosed |
| CN-116897222-A | Oxide film reaction surface control agent, oxide film forming method using the same, semiconductor substrate manufactured by the method, and semiconductor element | 秀博瑞殷株式公社 | 2023-10-17 | — | — | CN | disclosed |