SCHEMBL306327

SCHEMBL306327

CN(C)B(N(C)C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1158248 0.62
SCHEMBL173143 0.62
SCHEMBL8133628 0.59
SCHEMBL6436118 0.59
SCHEMBL6810164 0.59
SCHEMBL6434272 0.59
SCHEMBL6437489 0.59
SCHEMBL10426578 0.58
SCHEMBL31409261 0.56
SCHEMBL20376089 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 499 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260107710-A1 BORON CATALYZED DIELECTRIC FILM DEPOSITIONS APPLIED MATERIALS INC (US) 2026-04-16 US claimed
US-12525639-B2 Stabilizing garnet-type solid-state electrolytes through atomic layer deposition of ultra-thin layered materials and methods of making same WAYNE STATE UNIVERSITY (US) 2026-01-13 US claimed
US-12469713-B2 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium Kokusai Electric Corporation (JP) 2025-11-11 US claimed
US-20250174454-A1 METHOD FOR TREATING SUBSTRATE USING BORON COMPOUND TES CO., LTD (KR) 2025-05-29 US claimed
US-20250166990-A1 METHOD FOR FORMING INSULATING FILM, AND SUBSTRATE PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2025-05-22 US claimed
CN-119980519-A Preparation method of low-cost in-situ doped continuous silicon carbide fiber 福建立亚新材有限公司 2025-05-13 CN claimed
CN-119980518-A Preparation method of low-cost in-situ doped silicon nitride fiber 福建立亚新材有限公司 2025-05-13 CN claimed
WO-2025037567-A1 SUBSTRATE PROCESSING METHOD 東京エレクトロン株式会社 2025-02-20 WO claimed
CN-119465114-A Nickel plating solution on tungsten-based ceramic and chemical plating process thereof 江苏矽智半导体科技有限公司 2025-02-18 CN claimed
CN-119372625-A Process and apparatus for radical enhanced vapor deposition ASM IP私人控股有限公司 2025-01-28 CN claimed
WO-2016205196-A2 HALIDOSILANE COMPOUNDS AND COMPOSITIONS AND PROCESSES FOR DEPOSITING SILICON-CONTAINING FILMS USING SAME AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-12-22 WO claimed
EP-1693359-B1 Process for the preparation of hydroxyalkyl (meth)acrylates ALLNEX IP S R L (LU) 2015-09-23 EP claimed
US-8753717-B2 Film forming method and film forming apparatus TOKYO ELECTRON LIMITED (JP) 2014-06-17 US claimed
US-20110233513-A1 ENHANCED BONDING INTERFACES ON CARBON-BASED MATERIALS FOR NANOELECTRONIC DEVICES INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-09-29 US claimed
US-20110124187-A1 VAPOR PHASE DEPOSITION PROCESSES FOR DOPING SILICON INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-05-26 US claimed
US-7659425-B2 Process for preparing hydroxyalkyl(meth) acrylates using Lewis acid catalysts BAYER MATERIALSCIENCE AG (DE) 2010-02-09 US claimed
CN-101029055-A Method for producing dimethylamine boride LIANHUA CHEMISTRY CO LTD DALIA (CN) 2007-09-05 CN claimed
US-20060189823-A1 Process for preparing hydroxyalkyl(meth) acrylates using Lewis acid catalysts BAYER MATERIALSCIENCE AG 2006-08-24 US claimed
EP-1693359-A1 Process for the preparation of hydroxyalkyl (meth)acrylates Bayer MaterialScience AG (DE) 2006-08-23 EP claimed
US-5354506-A Preceramic compositions and ceramic products ALBEMARLE CORPORATION (US) 1994-10-11 US claimed