Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3800854 | 0.75 | TSHR (0.43) | TSHR | |
| SCHEMBL5266419 | 0.73 | CA1 (0.39) | — | |
| SCHEMBL5872376 | 0.70 | TSHR (0.33) | TSHR | |
| SCHEMBL10496811 | 0.70 | TSHR (0.33) | TSHR | |
| SCHEMBL21582190 | 0.67 | TSHR (0.55) | TSHR | |
| SCHEMBL9938412 | 0.67 | TSHR (0.31) | TSHR | |
| SCHEMBL598036 | 0.65 | TSHR (0.32) | TSHR | |
| SCHEMBL20609959 | 0.61 | — | — | |
| SCHEMBL2724340 | 0.61 | — | — | |
| SCHEMBL582319 | 0.61 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20090301867-A1 | INTEGRATED SYSTEM FOR SEMICONDUCTOR SUBSTRATE PROCESSING USING LIQUID PHASE METAL DEPOSITION | CITIBANK N.A. (US) | 2009-12-10 | — | — | US | claimed |
| US-7803719-B2 | Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device | FREESCALE SEMICONDUCTOR, INC. (US) | 2010-09-28 | — | — | US | disclosed |
| US-20090301867-A1 | INTEGRATED SYSTEM FOR SEMICONDUCTOR SUBSTRATE PROCESSING USING LIQUID PHASE METAL DEPOSITION | CITIBANK N.A. (US) | 2009-12-10 | — | — | US | disclosed |
| US-20090115031-A1 | SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND PASSIVATING COUPLING MATERIAL COMPRISING MULTIPLE ORGANIC COMPONENTS FOR USE IN A SEMICONDUCTOR DEVICE | FREESCALE SEMICONDUCTOR, INC. (US) | 2009-05-07 | — | — | US | disclosed |