Phosphine

Phosphine

SCHEMBL306494

P.[Co].[W]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Phosphine SCHEMBL3264976 0.87
Phosphine SCHEMBL5484761 0.87
Phosphine SCHEMBL27613182 0.87
Phosphine SCHEMBL27626535 0.87
Phosphine SCHEMBL722469 0.87
Phosphine SCHEMBL28256494 0.87
Phosphine SCHEMBL5057683 0.87
Phosphine SCHEMBL8941779 0.87
Phosphine SCHEMBL28002219 0.87
Phosphine SCHEMBL6852575 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1353 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118645438-A Bonding contact forming method, bonding structure and semiconductor device 杭州积海半导体有限公司 2024-09-13 CN claimed
WO-2024156770-A1 PLATING BATH COMPOSITION FOR PLATING OF PRECIOUS METAL AND A METHOD FOR DEPOSITING A PRECIOUS METAL LAYER Atotech Deutschland GmbH & Co. KG (DE) 2024-08-02 WO claimed
EP-4407067-A1 PLATING BATH COMPOSITION FOR PLATING OF PRECIOUS METAL AND A METHOD FOR DEPOSITING A PRECIOUS METAL LAYER Atotech Deutschland GmbH & Co. KG (DE) 2024-07-31 EP claimed
CN-113169125-B Warp compensated bonding structure including support chip and three-dimensional memory chip 桑迪士克科技有限责任公司 2024-05-28 CN claimed
CN-117801513-A Preparation method of multifunctional conductive rubber 上海航天设备制造总厂有限公司 2024-04-02 CN claimed
US-11948888-B2 Semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-04-02 US claimed
US-11935784-B2 Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same SANDISK TECHNOLOGIES LLC (US) 2024-03-19 US claimed
CN-116918064-A Three-dimensional memory device including self-aligned bit line contacts and method of forming the same 桑迪士克科技有限责任公司 2023-10-20 CN claimed
US-11764145-B2 Wiring structure having double capping structure, manufacturing method thereof, and integrated circuit chip having the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-09-19 US claimed
US-20230067527-A1 SEMICONDUCTOR STRUCTURE HAVING DEEP METAL LINE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2023-03-02 US claimed
US-20030119317-A1 Semiconductor device and production method therefor SONY CORPORATION (JP) 2003-06-26 US claimed
US-20030072928-A1 Self-aligned corrosion stop for copper C4 and wirebond GLOBALFOUNDRIES U.S. INC. 2003-04-17 US claimed
US-6528185-B2 Electrolessly depositing on copper and copper alloys a ternary amorphous-microcrystalline cobalt alloy of cobalt, tungsten and phosphorus from an aqueous bath to achieve a barrier layer to impede the migration of copper atoms to the overplate HONG KONG POLYTECHNIC UNIVERSITY (HK) 2003-03-04 US claimed
US-6479384-B2 Process for fabricating a semiconductor device SONY CORPORATION (JP) 2002-11-12 US claimed
US-20020160222-A1 Cobalt-tungsten-phosphorus alloy diffusion barrier coatings, methods for their preparation, and their use in plated articles HONG KONG POLYTECHNIC UNIVERSITY, THE (HK) 2002-10-31 US claimed
US-20020066671-A1 Seed layer deposition SHIPLEY COMPANY, L.L.C. (US) 2002-06-06 US claimed
EP-1201786-A2 Seed layer deposition Shipley Company LLC (US) 2002-05-02 EP claimed
WO-2001099173-A2 METHOD OF TREATING A SUBSTRATE APPLIED MATERIALS, INC. (US) 2001-12-27 WO claimed
US-20010055934-A1 Method and apparatus for treating a substrate APPLIED MATERIALS, INC. 2001-12-27 US claimed
US-6258707-B1 Triple damascence tungsten-copper interconnect structure INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-07-10 US claimed